MAPLST2122-030CF

RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 4/6/2005 Preliminary MAPLST2122-030CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. 30W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR @ 4.096MHz) Output Power: 4.5W (typ.) Gain: 12dB (typ.) Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 30W, 28V, 2110MHz) Package Style MAPLST2122-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.8 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V MAPLST2122-030CF 4/6/2005 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage OFF(VGS = 0 Vdc, ID = 20 µAdc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 (VDS = 65 Vdc, VGS = 0) DS GS Gate—Source Leakage Leakage Zero Gate Voltage DrainCurrent Current (VGS = 5 Vdc, V ) (VDS = 26Vdc, VDS ==00) GS Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS mA) (VDS = 28 Vdc, ID = 250 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Input Capacitance (Including Input Matching DYNAMIC CHARACTERISTICS (1) Capacitor in Package) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer TESTS (In FUNCTIONAL Capacitance M/A-COM Test Fixture) (2) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output VSWR Tolerance (VDD = 28 Vdc, POUT = 30 W, IDQ = 250 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps — 12.5 — dB Ciss Coss Crss — — — 90 32.5 1.5 — — — pF pF pF Symbol Min Typ Max Unit Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min 65 — — — — — 2 2 — — Typ — — — — — — — — 0.2 1.2 Max — 101 11 1 4 Unit Vdc µAdc µAdc µAdc µAdc Vdc µAdc Vdc Vdc S 4.5 — — EFF (ŋ) — 36 — % IMD — -30 -28 dBc IRL — -12 — dB Gps — 12.5 — dB EFF (ŋ) — 36 — % IMD — -30 -28 dBc IRL — -12 -9 dB Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V MAPLST2122-030CF 4/6/2005 Preliminary C1,C6 Tantalum Electrolytic Surface Mt. Cap., 22 µF C2,C7 Ceramic Chip Capacitor, 0.1 µF C3,C8 Ceramic Chip Capacitor, 1000 pF C4,C5,C9,C10 Chip Capacitor, 8.2 pF ATC100B C11 Chip Capacitor, 0.5 pF ATC100B C12 Chip Capacitor, 1.2 pF ATC100B Z1-Z9 Distributed Microstrip Element J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T L2 Inductor, 18.5 nH, CoilCraft A05T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST2122-030CF R1 Chip Resistor (0805), 100k Ohm R2 Chip Resistor (0805), 10K Ohm PC Board (74350132-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 2110—2170 MHz Test Fixture Schematic Figure 2. 2110—2170 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V MAPLST2122-030CF 4/6/2005 Preliminary 14.0 13.5 13.0 20 VDD = 28, f = 2.17GHz, IDQ = 350mA Gain (dB) 12.5 12.0 11.5 11.0 10.5 10.0 26 28 30 32 34 36 0 5 10 POUT (dBm) avg. Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power -30 -35 -40 VDD = 28, f = 2.17GHz, IDQ = 350mA ACPR (dBc) -45 -50 -55 -60 -65 25 26 27 28 29 30 31 32 33 34 35 36 37 POUT (dBm) avg. Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power 4 Efficiency (%) 15 RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V MAPLST2122-030CF 4/6/2005 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020