MAPLST2122-060CF

RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 Preliminary MAPLST2122-060CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. 60W output power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Output Power: 7.5W (typ.) Gain: 12dB (typ.) Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) Package Style MAPLST2122-060CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 175 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.0 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) 65 DS GS Gero Gate Voltage DrainCurrent Current Z ate—Source Leakage Leakage (VGS = 5 6 Vdc, V = = ) ) (V = 2 Vdc, VDS 0 0 DS GS Symbol Min Typ Max Unit Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min 65 — — — — 2 — 2 — — Typ — — — — — — — — 0.4 2.4 Max — 1 10 11 1 4 Unit Vdc µAdc µAdc µAdc µAdc Vdc µAdc Vdc Vdc S Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON (VDS = 28 Vdc, ID = 500 mA) CHARACTERISTICS Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Input Capacitance (Including Input Matching Capacitor in Package) DYNAMIC CHARACTERISTICS (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance FUNCTIONAL TESTS, f = 1M/A-COM (In MHz) (VDS = 28 Vdc, VGS = 0 4.5 — — Ciss Coss Crss — — — 180 65 3.0 — — — pF pF pF Test Fixture) (2) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output VSWR Tolerance (VDD = 28 Vdc, POUT = 60 W, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps — 12.0 — dB EFF (ŋ) — 35 — % IMD — -30 -28 dBc IRL — -12 — dB Gps — 12.0 — dB EFF (ŋ) — 35 — % IMD — -30 -28 dBc IRL — -12 -9 dB Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary C1 Ceramic Chip Capacitor, 10 pF C2,C5 Ceramic Chip Capacitor, 0.5 pF C3,C4 Ceramic Chip Capacitor, 1.8 pF C6,C7,C12,C13 Chip Capacitor, 8.2 pF C8, C10 Chip Capacitor, 1 µF C9, C11 Chip Capacitor, 0.1 µF C14,C15 Ceramic Capacitor, 100 µF Z1-Z8 Distributed Microstrip Element J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft B Series L2, L3 Inductor, 18.5 nH, CoilCraft B Series P1,P2 Connector, 5 Pin Q1 Transistor, MAPLST2122-060CF R1 Chip Resistor, 10 Ohm PC Board (74350144-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 2110—2170 MHz Test Fixture Schematic Figure 2. 2110—2170 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary 14 13 12 VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3.84MHz BW, 16 DPCH 25 20 15 10 Efficiency 11 10 9 8 7 6 25 Gain 5 0 30 35 40 POUT (dBm) Avg. Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 25 VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3.84MHz BW, 16 DPCH ACPR (dBc) 5MHz Offset 10MHz Offset 27 29 31 33 35 37 39 41 POUT (dBm) Avg. Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power 4 Efficiency (%) Gain (dB) RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. 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