MAPLST2122-090CF

RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 Preliminary MAPLST2122-090CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power amplifier applications. 90W Output Power at P1dB (CW) 11dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Output Power: 12W (typ.) Gain: 12dB (typ.) Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) Package Style MAPLST2122-090CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Drain Current — Continuous Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS ID PD TSTG TJ Rating 65 20 20 206 -40 to +150 +200 Units Vdc Vdc Adc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage OFF(VGS = 0 Vdc, ID = 100 µAdc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 (VDS = 65 Vdc, VGS = 0) DS GS Gate—Source Leakage Leakage Zero Gate Voltage DrainCurrent Current (VGS = 5 Vdc, V ) (VDS = 26Vdc, VDS ==00) GS Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 60 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS mA) (VDS = 28 Vdc, ID = 750 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC O YNAMIC CHARACTERISTICS (1) Dutput Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2) FUNCTIONAL TESTS@ 25ºC (In M/A-COM Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Intermodulation (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Common-Source Amplifier Intermodulation (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output VSWR Tolerance (VDD = 28 Vdc, POUT = 90 W PEP. IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps — 11 — dB Coss Crss — — 98 4.5 — — pF pF Symbol Min Typ Max Unit Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min 65 — — — — — 2 3 — — Typ — — — — — 2.6 — — TBD 4.0 Max — 101 11 1 4 5 — — Unit Vdc µAdc µAdc µAdc µAdc Vdc µAdc Vdc Vdc S EFF (ŋ) — 33 — % IMD — -30 — dBc IRL — -13 — dB Gps — 11 — dB EFF (ŋ) — 33 — % IMD — -30 — dBc IRL — -13 -9 dB Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary C1 Tantalum Electrolytic Surface Mt. Cap., 22 µF C2,C13 Ceramic Chip Capacitor, 0.1 µF C3,C12 Ceramic Chip Capacitor, 1000 pF C4,C5,C9,C10,C11 Chip Capacitor, 8.2 pF ATC100B C6,C7 Chip Capacitor, 1.0 pF ATC100B C8 Chip Capacitor, 0.3 pF, ATC100B C14 Electrolytic Surface Mount Capacitor, 220 µF J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST2122-090CF R1 Chip Resistor, 10 Ohm 1/4 Watt R2 Chip Resistor, 100K Ohm 1/4 Watt Z1-Z7 Distributed Microstrip Element PC Board (74350133-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 2110—2170 MHz Test Fixture Schematic Figure 2. 2110—2170 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary 25 VDD = 28V, f = 2.17GHz, IDQ = 850mA, 3.84MHz BW, 16 DPCH 14 13 12 20 15 10 Efficiency (%) Gain (dB) 11 10 9 8 7 6 27 Gain Efficiency 5 0 32 37 42 POUT (dBm) Avg. Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 27 29 31 33 35 37 39 41 43 10MHz Offset 5MHz Offset VDD = 28V, f = 2.17GHz, IDQ = 850mA, 3.84MHz BW, 16 DPCH ACPR (dBc) POUT (dBm) Avg. Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power 4 RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V MAPLST2122-090CF 4/6/2005 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. 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