MRF10005

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10005/D The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) • RF Performance Curves given for 28 Vdc and 36 Vdc Operation • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF10005 5.0 W, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 336E–02, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous (1) Total Device Dissipation @ TA = 25°C (1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 1.25 25 143 –65 to +200 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 7.0 Unit °C/W NOTES: 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) Collector Cutoff Current (VCB = 28 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 55 55 3.5 — — — — — — — — 1.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) hFE 20 — 100 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 7.0 10 pF FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz, VSWR = 10:1 All Phase Angles) GPB η ψ No Degradation in Output Power 8.5 45 10.3 55 — — dB % + L1 C3 C4 C5 + - 28 Vdc Z10 D.U.T. RF INPUT Z1 C2 Z9 RF OUTPUT Z2 Z3 Z4 Z5 Z6 Z7 Z8 C1 C1, C2, C3 — 220 pF 100 mil Chip Capacitor C4 — 0.1 µF C5 — 47 µF/50 V Electrolytic L1 — 3 turn #18 AWG, 1/8″ ID, 0.18″ Long Z1–Z10 — Microstrip, see details below Board Material — 0.030″ Glass Teflon, 2.0 oz. Copper, εr = 2.55 0.20 0.25 0.050 0.37 0.70 0.57 0.13 0.375 0.660 0.275 0.000 1.385 1.125 0.650 0.30 0.16 0.25 0.40 0.25 1.91 1.96 2.365 0.40 0.050 0.90 0.08 0.50 2.365 0.080 0.20 0.00 0.20 0.30 0.40 0.70 Figure 1. Test Circuit REV 6 2 1.45 9 Po, OUTPUT POWER (WATTS) 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VCC = 28 Vdc f = 960 MHz 1215 MHz Po, OUTPUT POWER (WATTS) 8 9 8 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 f = 960 MHz 1215 MHz VCC = 36 Vdc 0.4 0.5 0.6 0.7 0.8 0.9 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power Pout = 5 W, VCC = 28 V f = 960 MHz 1025 Zin Zo = 25 Ω 1215 1090 1150 f MHz 960 1025 1090 1150 1215 Zin OHMS 6.5 + j8.5 10.0 + j7.0 11.2 + j4.9 10.8 + j2.0 7.8 + j0.0 ZOL* OHMS 7.4 - j18.9 7.2 - j17.4 7.1 - j16.3 7.15 - j14.3 7.8 - j11.2 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. 1215 ZOL* 1150 1090 1025 f = 960 MHz Figure 4. Series Equivalent Input/Output Impedances REV 6 3 PACKAGE DIMENSIONS –A– G H 1 Q 2 PL 0.25 (0.010) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H K N Q U INCHES MIN MAX 0.790 0.810 0.253 0.267 0.144 0.160 0.093 0.107 0.074 0.080 0.002 0.006 0.560 BSC 0.043 0.057 0.346 0.394 0.243 0.257 0.125 0.135 0.117 0.128 MILLIMETERS MIN MAX 20.07 20.57 6.43 6.78 3.66 4.06 2.37 2.71 1.88 2.03 0.06 0.15 14.22 BSC 1.10 1.44 8.79 10.10 6.18 6.52 3.18 3.42 2.98 3.25 –B– 3 K 2 D F U STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE N E C –T– SEATING PLANE CASE 336E–02 ISSUE B Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 6 4