MRF154

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF154/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. MRF154 600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET D G S CASE 368–03, STYLE 2 (HOG PAC) MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 60 1350 7.7 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.13 Unit °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate–Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 — — — — — — 20 5.0 Vdc mAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 40 A) Forward Transconductance (VDS = 10 V, ID = 20 A) VGS(th) VDS(on) gfs 1.0 1.0 16 3.0 3.0 20 5.0 5.0 — Vdc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss — — — 1600 950 175 — — — pF pF pF FUNCTIONAL TESTS Common Source Amplifier Power Gain (VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz) Drain Efficiency (VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz) Intermodulation Distortion (VDD = 50 V, Pout = 600 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA) + – Gps η IMD(d3) — — — 17 45 – 25 — — — dB % dB 0–6 V + R1 C5 C6 L2 L3 C20 C21 50 V – DUT R2 C4 RF INPUT C1 L1 C10 C3 C2 C7 C9 T1 C1, C3, C8 — Arco 469 C2 — 330 pF C4 — 680 pF C5, C19, C20 — 0.47 µF, RMC Type 2225C C6, C7, C14, C15, C16 — 0.1 µF C9, C10, C11 — 470 pF C12 — 1000 pF C13 — Two Unencapsulated 1000 pF Mica, in Series C17, C18 — 0.039 µF C21 — 10 µF/100 V Electrolytic L1 — 2 Turns #16 AWG, 1/2″ ID, 3/8″ Long L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801 RF OUTPUT C11 C12 C13 C14 C15 C16 C17 C18 C19 C8 R1, R2 — 10 Ohms/2.0 W Carbon T1 — RF Transformer, 1:25 Impedance Ratio. See M/A-COM T1 — Application Note AN749, Figure 4 for details. T1 — Ferrite Material: 2 Each, Fair–Rite Products T1 — Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test Circuit REV 2 2 25 Pout , OUTPUT POWER (WATTS) 20 POWER GAIN (dB) 800 600 400 200 0 0 10 (IDQ = 800 mA) 100 MHz 40 V 0 50 Pin, INPUT POWER (WATTS) 100 VGS = 0 V f = 1 MHz Ciss Coss Crss 50 100 VDS = 30 V 15 V 300 200 100 0 60 VDD = 50 V 40 V 30 MHz 15 20 10 VDD = 50 V IDQ = 800 mA Pout = 600 W 800 600 400 200 5 VDD = 50 V 0 2 5 10 20 50 f, FREQUENCY (MHz) 100 200 0 Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power 100 I D, DRAIN CURRENT (AMPS) TC = 25°C 10,000 5000 C, CAPACITANCE (pF) 2 20 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 200 2000 1000 500 10 200 1 100 1 2 5 10 20 VDS, DRAIN VOLTAGE (VOLTS) Figure 4. DC Safe Operating Area Figure 5. Capacitance versus Drain Voltage 40 f t, UNITY GAIN FREQUENCY (MHz) 600 500 400 IDS , DRAIN CURRENT (AMPS) 30 TYPICAL DEVICE SHOWN VDS = 10 V VGS(th) = 3.5 V gfs = 24 mhos 20 10 0 0 4 6 VGS, GATE–SOURCE VOLTAGE (VOLTS) 2 8 0 20 40 ID, DRAIN CURRENT (AMPS) Figure 6. Gate Voltage versus Drain Current Figure 7. Common Source Unity Gain Frequency versus Drain Current REV 2 3 f = 100 MHz 60 30 15 7.5 4.0 2.0 Zo = 10 Ω Zin VDD = 50 V IDQ = 800 mA Pout = 600 W Figure 8. Series Equivalent Impedance BIAS – 30 – 40 V + R5 R4 IC1 R7 C1 D1 R2 R3 R6 INPUT R1 D2 C2 R13 R9 D.U.T. C10 L1 L2 + 40 V – + C5 C4 C8 R11 C6 C7 XTR XTR OUTPUT R12 T1 C9 T2 D3 C3 R8 R10 D.U.T. R14 C11 TEMP. TRACKING C1 — 1000 pF Ceramic C2, C3, C4, C8, C9, C10, C11 — 0.1 µF Ceramic C5 — 10 µF/100 V Electrolytic C6, C7 — 0.1 µF Ceramic, (ATC 200/823 or Equivalent) D1 — 28 V Zener, 1N5362 or Equivalent D3 — 1N4148 IC1 — MC1723 L1, L2 — Fair–Rite Products Corp. Ferrite Beads #2673000801 R1, R2, R3 — 10 k Trimpot R4 — 1.0 k/1.0 W R5 — 10 Ohms R6 — 2.0 k R7 — 10 k R8 — Thermistor, 10 k (25°C), 2.5 k (75°C) R9, R10 — 100 Ohms R11, R12 — 1.0 k R13, R14 — 50 – 100 Ohms, 4.0 x 2.0 W Carbon in Parallel T1 — 9:1 Transformer, Trifilar and Balun Wound on Separate T1 — Fair–Rite Products Corp. Balun Cores #286100012, 5 Turns Each. T2 — 1:9 Transformer, Balun 50 Ohm CO–AX Cable RG–188, T2 — Low Impedance Lines W.L. Gore 16 Ohms CO–AX Type CXN 1837. T2 — Each Winding Threaded Through Two Fair–Rite Products Corp. T2 — #2661540001 Ferrite Sleeves (6 Each). XTR — MRF154 Figure 9. 20 – 80 MHz 1.0 kW Broadband Amplifier REV 2 4 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to– source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full–on condition. This on–resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. MOUNTING OF HIGH POWER RF POWER TRANSISTORS The package of this device is designed for conduction cooling. It is extremely important to minimize the thermal resistance between the device flange and the heat dissipator. Since the device mounting flange is made of soft copper, it may be deformed during various stages of handling or during transportation. It is recommended that the user makes a final inspection on this before the device installation. ±0.0005″ is considered sufficient for the flange bottom. The same applies to the heat dissipator in the device mounting area. If copper heatsink is not used, a copper head spreader is strongly recommended between the device mounting surfaces and the main heatsink. It should be at least 1/4″ thick and extend at least one inch from the flange edges. A thin layer of thermal compound in all interfaces is, of course, essential. The recommended torque on the 4–40 mounting screws should be in the area of 4 – 5 lbs.–inch, and spring type lock washers along with flat washers are recommended. For die temperature calculations, the ∆ temperature from a corner mounting screw area to the bottom center of the flange is approximately 5°C and 10°C under normal operating conditions (dissipation 150 W and 300 W respectively). The main heat dissipator must be sufficiently large and have low Rθ for moderate air velocity, unless liquid cooling is employed. REV 2 5 CIRCUIT CONSIDERATIONS At high power levels (500 W and up), the circuit layout becomes critical due to the low impedance levels and high RF currents associated with the output matching. Some of the components, such as capacitors and inductors must also withstand these currents. The component losses are directly proportional to the operating frequency. The manufacturers specifications on capacitor ratings should be consulted on these aspects prior to design. Push–pull circuits are less critical in general, since the ground referenced RF loops are practically eliminated, and the impedance levels are higher for a given power output. High power broadband transformers are also easier to design than comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RCE(sat) = Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r DS(on) = ID IC REV 2 6 PACKAGE DIMENSIONS –A– U 1 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K N Q U V INCHES MIN MAX 1.490 1.510 0.990 1.010 0.330 0.365 0.490 0.510 0.195 0.205 0.045 0.055 0.004 0.006 0.425 0.500 0.890 0.910 0.120 0.130 1.250 BSC 0.750 BSC MILLIMETERS MIN MAX 37.85 38.35 25.15 25.65 8.38 9.27 12.45 12.95 4.95 5.21 1.14 1.39 0.10 0.15 10.80 12.70 22.87 23.11 3.05 3.30 31.75 BSC 19.05 BSC –B– V 3 N 2 Q 4 PL 0.25 (0.010) D N C –T– SEATING PLANE M TA M B M H E J STYLE 2: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 368–03 ISSUE C Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 2 7