MRF313

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF313/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ • Emitter Ballast and Low Current Density for Improved MTBF • Common Emitter for Improved Stability MRF313 1.0 W, 400 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 305A–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 40 3.0 150 6.1 35 –65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 28.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICEO 30 35 35 3.0 — — — — — — — — — — 1.0 Vdc Vdc Vdc Vdc mAdc (continued) 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) hFE 20 60 150 — DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc, VCE = 20 Vdc, f = 200 MHz) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) fT Cob — — 2.5 3.5 — 5.0 GHz pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (1) (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Series Equivalent Input Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Series Equivalent Output Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) NOTE: 1. Class C Gpe η Zin Zout 15 — — — 16 45 6.4 – j4.8 75 – j45 — — — — dB % Ohms Ohms C7 C6 L3 L4 C8 + C9 C5 + +28 V RF OUTPUT RF INPUT C2 Z2 Z1 L1 DUT Z3 C1 L2 R C3 C4 C1, C2, C4 — 1.0–20 pF JOHANSON 9063 C3 — 1.0–10 pF JOHANSON C5 — 150 pF Chip C6 — 0.1 µF C7, C8 — 680 pF Feedthru C9 — 1.0 µF TANTALUM L1, L3 — 5 Turns, AWG #20, 1/4″ I.D. L2 — Ferrite Bead, FERROXCUBE L2 — No. 56–590–65/4B L4 — FERROXCUBE VK200–20/4B L4 — Input/Output Connectors — Type N Board — Glass Teflon, ε = 2.56, t = 0.062″ R — 4.7 Ohms, 1/4 W Z1 — 2.0″ x 0.1″ MICROSTRIP LINE Z2, Z3 — 2.6″ x 0.1″ MICROSTRIP LINE Figure 1. 400 MHz Power Gain Test Circuit 2 PACKAGE DIMENSIONS M D 1 4 2 3 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A C D F H J K M STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.200 0.220 0.095 0.130 0.055 0.065 0.025 0.035 0.040 0.050 0.003 0.007 0.435 --45 _REF MILLIMETERS MIN MAX 5.08 5.59 2.41 3.30 1.40 1.65 0.64 0.89 1.02 1.27 0.08 0.18 11.05 --45 _REF F J A C EMITTER BASE EMITTER COLLECTOR H CASE 305A–01 ISSUE A Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3