MRF316

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF316/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 10 dB • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 9.0 13.5 220 1.26 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF316 80 W, 3.0–200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 — — — — — — — — — — 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) hFE 10 — 80 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 100 130 pF NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 7 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit NARROW BAND FUNCTIONAL TESTS (Figure 1) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 80 W CW, f = 150 MHz, VSWR = 30:1 all phase angles) GPE η ψ No Degradation in Output Power 10 55 13 — — — dB % R2 R3 RFC6 + 28 Vdc C13 RFC5 DUT RFC4 C8 L2 C12 RF OUTPUT C9 C10 C11 C1 RF INPUT C2 C3 C4 L1 C5 C6 RFC1 RFC2 RFC3 C7 R1 C1 — 22 pF 100 mil ATC C2, C3 — 24 pF 100 mil ATC C4, C11 — 0.8–20 pF JMC #5501 Johanson C5 — 200 pF 100 mil ATC C6 — 240 pF 100 mil ATC C7 — Dipped Mica 1000 pF C8 — 0.1 µF Erie Red Cap C9, C10, C12 — 30 pF 100 mil ATC C13 — 1.0 µF Tantalum L1 — 0.8″, #20 Wire L2 — 1.0″, #20 Wire RFC1, RFC4 — 0.15 µH Molded Coil RFC2, RFC3 — Ferroxcube Bead 56–590–65–3B RFC5 — 2.5″, #20 Wire, 1.5 Turns RFC6 — Ferroxcube VK200–19/4B R1 — 10 Ω, 1/2 W R2, R3 — 10 Ω, 1.0 W Figure 1. 150 MHz Test Amplifier REV 7 2 TYPICAL PERFORMANCE CURVES VCC = 28 V GPE, COMMON EMITTER POWER GAIN (dB) 140 Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 0.2 0.3 0.4 0.5 0.7 3 1 2 Pin, INPUT POWER (WATTS) 45 7 10 50 MHz f = 30 MHz 26 22 18 14 10 6 20 Pout = 80 W VCC = 28 V 100 MHz 150 MHz 200 MHz 60 100 140 f, FREQUENCY (MHz) 180 220 Figure 2. Output Power versus Input Power Figure 3. Power Gain versus Frequency 130 Pout , OUTPUT POWER (WATTS) 110 90 70 50 Pin = 8 W 6W 4W 120 Pout , OUTPUT POWER (WATTS) 100 80 60 40 Pin = 8 W 6W 4W 2W 2W f = 100 MHz 30 12 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 16 28 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) f = 150 MHz 28 Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 110 Pout , OUTPUT POWER (WATTS) Pin = 8 W 90 70 50 30 f = 200 MHz 10 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 6W 4W 2W Figure 6. Output Power versus Supply Voltage REV 7 3 1.0 2.0 3.0 0 1.0 Zin 100 1.0 200 125 150 2.0 3.0 4.0 50 f = 30 MHz 175 150 200 2.0 175 3.0 125 100 ZOL* VCC = 28 V, Pout = 80 W 4.0 5.0 6.0 f MHz 30 50 100 125 150 175 200 Zin OHMS 1.2 - j2.4 1.1 - j2.2 0.3 + j0.7 0.6 + j1.2 0.9 + j1.6 2.2 + j0.3 0.3 + j0.8 ZOL* OHMS 5.5 - j6.8 4.5 - j6.0 2.7 - j3.5 2.3 - j2.6 2.0 - j1.7 1.9 - j1.3 2.0 - j0.9 50 f = 30 MHz 7.0 8.0 9.0 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 7. Series Equivalent Input–Output Impedance REV 7 4 PACKAGE DIMENSIONS D R F 4 3 NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. DIM A B C D E F H J K L N Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 K 1 Q 2 L B J E N H A U C EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 7 5