MRF317

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF317/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability • High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service • Guaranteed Performance in Broadband Test Fixture MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak (10 seconds) Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 12 18 270 1.54 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF317 100 W, 30–200 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 — — — — — — — — — — 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 25 80 — NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 7 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 150 175 pF FUNCTIONAL TESTS (Figure 2) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) Load Mismatch (VCC = 28 Vdc, Pout = 100 W CW, f = 150 MHz, VSWR = 30:1 all phase angles) GPE η ψ No Degradation in Output Power 9.0 55 10 60 — — dB % REV 7 2 R2 R3 R1 C5 RFC3 RFC2 RFC4 L3 DUT L1 C2 C3 C4 RFC5 C11 C12 L4 C10 RF OUTPUT C13 RFC6 DC +28 Vdc RFC1 RF INPUT C1 L2 C6 C7 C8 C9 C1, C9 — 39 pF, 100 mil ATC C2 — 120 pF, 100 mil ATC C3, C4 — 360 pF, 100 mil ATC C5 — 1000 pF Dipped Mica C6, C7 — 100 pF, 100 mil ATC* C8 — 18 pF, 100 mil ATC* C10 — 43 pF, 100 mil ATC C11 — 60 pF, Underwood C12 — 0.1 µF Erie Redcap C13 — 1000 pF, Underwood J102 L1 — 50 nH L2 — 6.0 nH L3 — 8.0 nH L4 — 32 nH RFC1 — 0.15 µH Molded Coil RFC2, RFC3 — Ferroxcube Bead 56–590–65/3B RFC4 — 1 Turn, #18 Wire, 2.0″ L RFC5 — Ferroxcube VK200 19/4B RFC6 — 7 Turns, #18 Wire, 0.3″ ID R1 — 10 Ω 1/2 W R2, R3 — 10 Ω 1.0 W *Combination of C6, C7, C8 equals 220 pF. Figure 1. 110–160 MHz Broadband Amplifier — Test Fixture Schematic 70 10 G PE , POWER GAIN (dB) 60 EFFICIENCY, η (%) 9 8 7 6 110 135 f, FREQUENCY (MHz) 160 20 110 135 f, FREQUENCY (MHz) 160 50 40 30 Pout = 100 W VCC = 28 V Pout = 100 W VCC = 28 V Figure 2. Power Gain versus Frequency Broadband Test Fixture 6 5 INPUT VSWR 4 3 2 1 110 Pout , OUTPUT POWER (WATTS) Pout = 100 W VCC = 28 V 140 120 100 80 60 40 20 0.2 Figure 3. Efficiency versus Frequency Broadband Test Fixture VCC = 28 V f = 30 MHz 50 MHz 200 MHz 150 MHz 100 MHz 135 f, FREQUENCY (MHz) 160 0.5 1 2 5 10 20 Pin, INPUT POWER (WATTS) Figure 4. Input VSWR versus Frequency Broadband Test Fixture REV 7 Figure 5. Output Power versus Input Power 3 TYPICAL PERFORMANCE CURVES G PE , COMMON EMITTER POWER GAIN (dB) 120 17 16 15 14 13 12 11 10 9 8 20 40 60 80 100 120 140 160 180 200 20 12 16 20 24 Pout , POWER OUTPUT (WATTS) Pout = 100 W VCC = 28 V 100 80 60 40 f = 100 MHz 28 Pin = 10 W 8W 6W f, FREQUENCY (MHz) VCC, SUPPLY VOLTAGE (VOLTS) Figure 6. Power Gain versus Frequency Figure 7. Power Output versus Supply Voltage 120 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) 100 80 60 40 f = 150 MHz 20 12 16 20 24 28 20 12 16 20 24 Pin = 10 W 8W 6W 100 80 60 40 f = 200 MHz 28 Pin = 10 W 8W 6W VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 8. Power Output versus Supply Voltage Figure 9. Power Output versus Supply Voltage 2.0 3.0 4.0 1.0 0 50 f = 30 MHz 100 ZOL* 125 200 175 150 Zin 100 1.0 2.0 3.0 4.0 5.0 1.0 125 200 150 175 2.0 3.0 VCC = 28 V, Pout = 100 W f MHz 30 50 100 125 150 175 200 Zin OHMS 1.2 - j2.0 1.0 - j1.8 0.3 + j0.7 0.3 + j1.0 0.6 + j1.3 1.0 + j1.5 0.9 + j1.0 ZOL* OHMS 4.3 - j5.0 4.0 - j4.9 2.0 - j2.3 1.9 - j1.9 1.9 - j1.3 1.6 - j0.6 1.1 - j0.6 50 f = 30 MHz 6.0 ZOL* = Conjugate of the optimum load impedance into which the device output ZOL* = operates at a given output power, voltage and frequency. Figure 10. Series Equivalent Input–Output Impedance REV 7 4 PACKAGE DIMENSIONS D R F 4 3 NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. DIM A B C D E F H J K L N Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 K 1 Q 2 L B J E N H A U C EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 7 5