MRF323

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF323/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50% Min • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability • Computer–Controlled Wirebonding Gives Consistent Input Impedance MRF323 20 W, 400 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 2.2 3.0 55 310 –65 to +150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 244–04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 3.2 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 33 60 60 4.0 — — — — — — — — — — 2.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 20 — 80 — NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 20 24 pF FUNCTIONAL TESTS (Figure 1) Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz, VSWR = 30:1 all phase angles) GPE η ψ No Degradation in Output Power 10 50 11 60 — — dB % L4 C9 C10 + + 28 V - C8 L3 Z3 L2 C5 C3 C4 R1 C11 DUT RF INPUT Z1 Z2 Z4 C12 RF OUTPUT C1 C2 L1 C6 C7 C1, C2, C6 — 1.0–20 pF Johanson Trimmer (JMC 5501) C3, C4 — 47 pF ATC Chip Capacitor C5, C8 — 0.1 µF Erie Redcap C7 — 0.5–10 pF Johanson Trimmer (JMC 5201) C9, C10 — 680 pF Feedthru C11 — 1.0 µF 50 Volt Tantalum C12 — 0.018 µF Vitramon Chip Capacitor L1 — 0.33 µH Molded Choke with Ferroxcube Bead L1 — (Ferroxcube 56–590–65/4B) on Ground End L2 — 6 Turns #20 Enamel, 1/4″ ID, Closewound L3 — 4 Turns #20 Enamel, 1/8″ ID, Closewound L4 — Ferroxcube VK200–19/4B R1 — 5.1 Ω 1/4 Watt Z1 — Microstrip 0.1″ W x 1.35″ L Z2 — Microstrip 0.1″ W x 0.55″ L Z3 — Microstrip 0.1″ W x 0.8″ L Z4 — Microstrip 0.1″ W x 1.75″ L Board — Glass Teflon εr = 2.56, t = 0.062″ Input/Output Connectors — Type N Figure 1. 400 MHz Test Circuit Schematic 2 25 Pout , OUTPUT POWER (WATTS) 20 15 10 5 VCC = 28 V 0 0 200 300 400 Pout , OUTPUT POWER (WATTS) Pin = 3 W 2.5 W 2W 1.5 W 1W 0.7 W 0.4 W 500 25 20 15 10 5 f = 200 MHz 400 500 VCC = 28 V 0 0 1 2 3 4 5 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Frequency Figure 3. Output Power versus Input Power 24 G PE , COMMON EMITTER AMPLIFIER POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) Pin = 1.8 W 20 16 12 8 f = 400 MHz 4 10 14 18 22 26 30 22 18 14 10 6 2 Po = 20 W VCC = 28 V 1.1 W 0 200 300 400 500 VCC, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency 3 -5 -10 0 400 Zin f = 200 MHz 450 5 10 500 5 450 400 ZOL* f = 200 MHz 10 500 Pout = 20 W, VCC = 28 V f MHz 200 400 450 500 Zin Ohms 0.6 - j0.23 0.71 + j1.79 1.2 + j3.8 2.3 + j5.5 ZOL* Ohms 7.2 - j11.4 6.0 - j6.87 5.9 - j5.1 6.2 - j3.1 15 20 25 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 6. Series Equivalent Impedance 4 PACKAGE DIMENSIONS 2 3 4 1 D K M DIM A B C D E G J K M P S T U STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 14.99 16.51 5.46 5.96 1.40 1.65 1.52 --0.08 0.17 11.05 --45_NOM --1.27 3.00 3.25 1.40 1.77 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.590 0.650 0.215 0.235 0.055 0.065 0.060 --0.003 0.007 0.435 --45 _NOM --0.050 0.118 0.128 0.055 0.070 0.115 0.145 T A J F SEATING PLANE P 8-32 NC 2A U S C WRENCH FLAT E B EMITTER BASE EMITTER COLLECTOR CASE 244–04 ISSUE J Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5