MRF392

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF392/D The RF Line NPN Silicon Push-Pull RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency = 55% (Typ) • Built–In Input Impedance Matching Networks for Broadband Operation • Push–Pull Configuration Reduces Even Numbered Harmonics • Gold Metallization System for High Reliability • 100% Tested for Load Mismatch MRF392 125 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON 2 6 5, 8 7 3 CASE 744A–01, STYLE 1 The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. 1, 4 PUSH–PULL TRANSISTORS MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 30 60 4.0 16 270 1.54 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull amplifier. REV 8 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 30 60 4.0 — — — — — — — — 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 40 60 100 — DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 75 95 pF FUNCTIONAL TESTS (2) — See Figure 1 Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz, VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push–pull amplifier. L5 C11 C12 C13 + C14 C15 + 28 V – Gpe η ψ No Degradation in Output Power 8.0 50 10 55 — — dB % B1 C1 Z1 C3 Z1 C2 Z2 C4 Z2 L1 Z4 L3 C9 Z5 C7 Z5 L4 Z6 C8 Z6 C10 B2 Z3 C5 Z3 C6 Z4 L2 D.U.T. L6 C16 C17 C18 C19 C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent C5, C6 — 20 pF, 100 Mil Chip Cap (ATC) or Equivalent C7 — 18 pF, Mini Unelco or Equivalent C9, C10 — 270 pF, 100 Mil Chip Cap (ATC) or Equivalent C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent C13, C18 — 680 pF Feedthru C14, C19 — 0.1 µF Erie Redcap or Equivalent C15 — 20 µF, 50 V L1, L2 — 0.15 µH Molded Choke With Ferrite Bead L3, L4 — 2–1/2 Turns #20 AWG, 0.200 ID L5, L6 — 3–1/2 Turns #18 AWG, 0.200 ID B1 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L B2 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L Z1 — Microstrip Line 270 Mil L x 125 Mil W Z2 — Microstrip Line 375 Mil L x 125 Mil W Z3 — Microstrip Line 280 Mil L x 125 Mil W Z4 — Microstrip Line 300 Mil L x 125 Mil W Z5 — Microstrip Line 350 Mil L x 125 Mil W Z6 — Microstrip Line 365 Mil L x 125 Mil W Board Material — 0.0625″ Teflon Fiberglass εr = 2.5 ± 0.05 1 oz. Cu. Board Material — CLAD, Double Sided Figure 1. 400 MHz Test Fixture REV 8 2 160 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 140 120 100 80 60 40 20 0 0 5 10 15 VCC = 28 V f = 100 MHz 225 MHz 400 MHz 500 MHz 80 70 60 50 40 30 20 10 25 0 0 2 4 6 8 10 12 14 VCC = 13.5 V f = 100 MHz 225 MHz 400 MHz 20 16 18 20 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power 160 Pin = 10 W Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 f = 225 MHz 26 28 30 7W 5W Pout , OUTPUT POWER (WATTS) 140 140 120 100 80 60 40 20 0 10 160 Figure 3. Output Power versus Input Power Pin = 14 W 10 W 7W f = 400 MHz 12 14 16 18 20 22 24 26 28 30 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage Zin & ZOL* are given from base–to–base and collector–to–collector respectively. f = 100 MHz 500 CAPACITIVE REACTANCE COMPONENT (–jX) 225 400 ZOL* 225 500 450 Zin 450 400 INDUCTIVE REACTANCE COMPONENT (+jX) VCC = 28 V, Pout = 125 W f = 100 MHz f MHz 100 225 400 450 500 Zin OHMS 0.72 + j0.44 0.72 + j2.62 3.88 + j5.72 3.84 + j2.8 1.26 + j3.01 ZOL* OHMS 9.0 – j6.0 5.2 – j1.8 3.6 + j0.53 3.2 + j1.2 3.0 + j2.0 Zo = 20 Ω ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 6. Series Equivalent Input/Output Impedance REV 8 3 PACKAGE DIMENSIONS U Q 0.76 (0.030) M 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D E F G H J K L M N Q R U V MILLIMETERS MIN MAX 22.60 23.11 9.52 10.03 6.65 7.16 1.60 1.95 2.94 3.40 2.87 3.22 16.51 BSC 4.01 4.36 0.07 0.15 4.34 4.90 12.45 12.95 45_NOM 1.051 11.02 3.04 3.35 9.90 10.41 1.02 1.27 0.64 0.89 INCHES MIN MAX 0.890 0.910 0.375 0.395 0.262 0.282 0.063 0.077 0.116 0.134 0.113 0.127 0.650 BSC 0.158 0.172 0.003 0.006 0.171 0.193 0.490 0.510 45_NOM 0.414 0.434 0.120 0.132 0.390 0.410 0.040 0.050 0.025 0.035 M B M 1 2 3 4 A M K R –B– 5 6 7 8 K D 4 PL F V L G –A– J N 4 PL 2 PL H C E –T– SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER (COMMON) COLLECTOR COLLECTOR EMITTER (COMMON) EMITTER (COMMON) BASE BASE EMITTER (COMMON) CASE 744A–01 ISSUE C Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 8 4