MRF393

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF393/D The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55% (Typ) • Built–In Input Impedance Matching Networks for Broadband Operation • Push–Pull Configuration Reduces Even Numbered Harmonics • Gold Metallization System for High Reliability • 100% Tested for Load Mismatch MRF393 100 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON 2 6 5, 8 7 3 CASE 744A–01, STYLE 1 The MRF393 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. 1, 4 PUSH–PULL TRANSISTORS MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 30 60 4.0 16 270 1.54 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull amplifier. REV 7 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 30 60 4.0 — — — — — — — — 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 20 — 100 — DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob 40 75 95 pF FUNCTIONAL TESTS (2) — See Figure 1 Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz, VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push–pull amplifier. Gpe η ψ No Degradation in Output Power 7.5 50 8.5 55 — — dB % C10 C9 C11 L5 C12 + 28 V B1 C1 Z1 C3 C2 L2 C4 Z2 L1 Z3 L3 C7 Z5 C5 Z4 D.U.T. L4 C14 C13 Z6 C8 C6 B2 L6 C15 C16 C1, C2, C7, C8 — 240 pF 100 mil Chip Cap C3 — 15 pF 100 mil Chip Cap C4 — 24 pF 100 mil Chip Cap C5 — 33 pF 100 mil Chip Cap C6 — 12 pF 100 mil Chip Cap C9, C13 — 1000 pF 100 mil Chip Cap C10, C14 — 680 pF Feedthru Cap C11, C15 — 0.1 µF Ceramic Disc Cap C12, C16 — 50 µF 50 V L1, L2 — 0.15 µH Molded Choke with Ferrite Bead L3, L4 — 2–1/2 Turns #20 AWG 0.200″ ID L5, L6 — 3–1/2 Turns #18 AWG 0.200″ ID B1, B2 — Balun 50 Ω Semi Rigid Coax, 86 mil OD, 4″ Long Z1, Z2 — 850 mil Long x 125 mil W. Microstrip Z3, Z4 — 200 mil Long x 125 mil W. Microstrip Z5, Z6 — 800 mil Long x 125 mil W. Microstrip Board Material — 0.0325″ Teflon–Fiberglass, εr = 2.56, Board Material — 1 oz. Copper Clad both sides. Figure 1. 500 MHz Test Fixture REV 7 2 CLASS C 80 f = 100 MHz Pout , OUTPUT POWER (WATTS) 140 120 500 MHz 100 80 60 40 20 0 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) VCC = 28 V 16 18 20 225 MHz 400 MHz Pout , OUTPUT POWER (WATTS) 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) VCC = 13.5 V 16 18 20 500 MHz f = 100 MHz 225 MHz 400 MHz Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power CLASS C 120 Pin = 10 W Pout , OUTPUT POWER (WATTS) 100 Pout , OUTPUT POWER (WATTS) 8W 100 12 W 80 8W 60 120 Pin = 16 W 80 6W 60 40 f = 225 MHz 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 40 f = 500 MHz 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 2 4 f = 100 MHz 2 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a 2 ZOL* = given output power, voltage and frequency. 4 6 140 Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) f = 500 MHz VCC = 28 V ICQ = 200 mA 16 18 20 225 400 4 500 Zin 500 400 8 ZOL* 225 6 VCC = 28 V, Pout = 100 W f MHz 100 225 400 500 Zin 0.85 + j0 0.58 + j2.6 3.00 + j5.9 4.80 + j3.0 ZOL* 7.8 – j5.6 5.0 – j3.2 3.2 – j0.6 2.9 + j1.2 Zo = 20 Ω f = 100 MHz 8 NOTE: Zin & ZOL* are given from base–to–base NOTE: and collector–to–collector respectively. Figure 6. Series Equivalent Input/Output Impedance REV 7 Figure 7. Class AB Output Power versus Input Power 3 PACKAGE DIMENSIONS U Q 0.76 (0.030) M 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D E F G H J K L M N Q R U V MILLIMETERS MIN MAX 22.60 23.11 9.52 10.03 6.65 7.16 1.60 1.95 2.94 3.40 2.87 3.22 16.51 BSC 4.01 4.36 0.07 0.15 4.34 4.90 12.45 12.95 45_NOM 1.051 11.02 3.04 3.35 9.90 10.41 1.02 1.27 0.64 0.89 INCHES MIN MAX 0.890 0.910 0.375 0.395 0.262 0.282 0.063 0.077 0.116 0.134 0.113 0.127 0.650 BSC 0.158 0.172 0.003 0.006 0.171 0.193 0.490 0.510 45_NOM 0.414 0.434 0.120 0.132 0.390 0.410 0.040 0.050 0.025 0.035 M B M 1 2 3 4 A M K R –B– 5 6 7 8 K D 4 PL F V L G –A– J N 4 PL 2 PL H C E –T– SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER (COMMON) COLLECTOR COLLECTOR EMITTER (COMMON) EMITTER (COMMON) BASE BASE EMITTER (COMMON) CASE 744A–01 ISSUE C Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 7 4