SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF422/D
The RF Line
NPN Silicon RF Power Transistor
Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 150 W (PEP) — IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MRF422
150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstanding Current — 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 40 85 3.0 20 30 290 1.66 –65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 35 85 85 3.0 — — — — — — — — — — 20 Vdc Vdc Vdc Vdc mAdc (continued)
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 15 30 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 420 — pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) Intermodulation Distortion (1) (VCE = 28 Vdc, Pout = 150 W (PEP), IC = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) Output Power (VCE = 28 Vdc, f = 30 MHz) GPE 10 13 — dB
η
—
45
—
%
IMD
—
–33
–30
dB
Pout
150
—
—
Watts (PEP)
NOTE: 1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
+ BIAS -
R1 CR1 C6 C7 L2 L3 L4 C2 L1 D.U.T. C3 C5 C4 L5
+ C8 C9 C10 C11 28 Vdc
-
C1
R2
C1, C2, C3, C5 — 170–680 pF, ARCO 469 C4 — 80–480 pF, ARCO 466 C6, C8, C11 — ERIE 0.1 µF, 100 V C7 — MALLORY 500 µF, 15 V Electrolytic C9 — UNDERWOOD 1000 pF, 350 V C10 — 10 µF, 50 V Electrolytic R1 — 10 Ω, 25 Watt Wire Wound R2 — 10 Ω, 1.0 Watt Carbon CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 10 µH Molded Choke L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia. L4 — 5 Turns, 1/8″ Copper Tubing L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
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280 Pout , OUTPUT POWER (WATTS PEP) 240 200 160 120 80 40 0 0 2 4 6 8 10 Pin, INPUT POWER (WATTS PEP) 12 14 VCC = 28 V ICQ = 150 mA TWO TONE TEST: f = 30, 30.001 MHz
25 20 15 10 5 0 1.5 VCC = 28 V ICQ = 150 mA Pout = 150 W PEP 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30
Figure 2. Output Power versus Input Power
G PE , POWER GAIN (dB)
Figure 3. Power Gain versus Frequency
Pout , OUTPUT POWER (WATTS PEP)
240 200 160 120 80 40 0 16
IMD = 30 dB ICQ = 25 mA f = 30, 30.001 MHz
IMD, INTERMODULATION DISTORTION (dB)
280
-10 VCC = 28 V ICQ = 150 mA f = 30, 30.001 MHz
-20
-30
3RD ORDER 5TH ORDER
-40
20
24 28 VCC, SUPPLY VOLTAGE (VOLTS)
32
-50
0
40
80 120 160 Pout, OUTPUT POWER (WATTS PEP)
200
Figure 4. Linear Output Power versus Supply Voltage
Figure 5. Intermodulation Distortion versus Output Power
40 IC, COLLECTOR CURRENT (AMP) 20 8 4 2 0.8 0.4 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 f = 2 MHz 7 TC = 25°C 15 30
VCC = 28 V ICQ = 150 mA Pout = 150 W PEP FREQUENCY MHz 2 7 15 30 Zin Ohms 4.90 - j1.54 2.10 - j0.93 1.32 - j0.38 0.81 - j0.26
Figure 6. DC Safe Operating Area
Figure 7. Series Input Impedance
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5 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) 4 3 2 1 0 1.5 VCC = 28 V ICQ = 150 mA Pout = 150 W PEP 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF)
10 8 6 4 2 0 1.5 VCC = 28 V ICQ = 150 mA Pout = 150 W PEP 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30
Figure 8. Output Resistance versus Frequency
Figure 9. Output Capacitance versus Frequency
PACKAGE DIMENSIONS
A U M
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D K J H C E
SEATING PLANE
DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4.
INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54
EMITTER BASE EMITTER COLLECTOR
CASE 211–11 ISSUE N
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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