MRF426

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF426/D The RF Line NPN Silicon RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) Minimum Gain = 22 dB Efficiency = 35% • Intermodulation Distortion @ 25 W (PEP) — IMD = –30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Class A and AB Characterization • BLX 13 Equivalent MRF426 25 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211–07, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 5 s Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 35 65 4.0 3.0 6.0 70 0.4 –65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES 35 65 4.0 — — — — — — — — 10 Vdc Vdc Vdc mAdc NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 10 35 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) Cob — 60 80 pF FUNCTIONAL TESTS (SSB) Common–Emitter Amplifier Gain (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA) Collector Efficiency (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA) Intermodulation Distortion (2) (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA) Load Mismatch (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA, VSWR 30:1 at All Phase Angles) GPE 22 25 — dB η 35 — — % IMD(d3) — –35 –30 dB ψ No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (2) and Power Gain (VCC = 28 Vdc, Pout = 8.0 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 1.2 Adc) GPE IMD(d3) IMD(d5) — — — 23.5 –40 –55 — — — dB NOTE: 2. To Mil–Std–1311 Version A, Test Method 2204B, Two Tone, Reference each Tone. C8 RFC1 C9 L3 C6 C7 CR1 L4 L1 C1 C2 R1 DUT C4 L2 C3 RFC2 + 28 Vdc - BIAS INPUT RF OUTPUT C5 RF INPUT C1, C2 — ARCO 469, 190–780 pF C3, C4 — ARCO 464, 25–280 pF C5 — 120 pF Dipped Mica C6, C7 — 100 µF, 15 Vdc C8 — 680 pF F.T. Allen Bradley C9 — 1.0 µF 35 V Tantalum CR1 — 1N4997 L1 — 3 Turns #16 0.25″ ID L2 — 6 Turns #16 0.5″ ID L3 — 7 Turns #20 0.38″ ID L4 — 10 µH Molded Choke Delevan RFC1 — Ferroxcube VK200/20–4B RFC2 — 3–Ferroxcube 5653065–3B RF — Input/Output Connectors UG53 A/µ R1 — 10 Ω 1/2 Watt 10% Adjust Bias (Base) for ICQ = 20 mA with No RF Applied Figure 1. 30 MHz Linear Test Circuit 2 50 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS) 40 30 20 10 0 f = 30 MHz ICQ = 25 mA VCC = 28 Vdc 40 f = 30, 30.001 MHz ICQ = 25 mA IMD(d3) = -35 dB 30 20 10 0 20 40 60 Pin, INPUT POWER (mW) 80 100 0 16 24 28 20 VCC, SUPPLY VOLTAGE (VOLTS) 32 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage G PE , POWER GAIN (dB) 35 30 25 20 15 1.5 VCC = 28 V ICQ = 25 mA Pout = 25 W PEP 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 IMD, INTERMODULATION DISTORTION (dB) 40 -25 -30 -35 -40 -45 -50 d3 d5 f = 30, 30.001 MHz ICQ = 25 mA VCC = 28 V 0 10 20 30 Pout, OUTPUT POWER (WATTS PEP) Figure 4. Power Gain versus Frequency Figure 5. Intermodulation Distortion versus Output Power 5 IC, COLLECTOR CURRENT (AMP) 2.5 1 0.5 0.25 0.1 0.05 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 TC = 25°C Figure 6. DC Safe Operating Area 3 2500 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) 2000 1500 1000 500 0 1.5 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) VCC = 28 V ICQ = 25 mA Pout = 25 W PEP 25 VCC = 28 V ICQ = 25 mA Pout = 25 W PEP 15 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 5 1.5 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Figure 7. Output Capacitance versus Frequency Figure 8. Output Resistance versus Frequency 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 1.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 30 2.0 3.0 4.0 15 7.5 5.0 6.0 VCC = 28 V ICQ = 25 mA Pout = 25 W PEP f MHz 2.0 4.0 7.5 15 30 Zin Ohms 6.20 - j6.65 4.65 - j5.50 3.25 - j4.05 2.45 - j2.90 1.4 - j0.77 4.0 f = 2.0 MHz 9.0 7.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 12.0 Zo = 10 Ω 12.0 14.0 14.0 Figure 9. Series Equivalent Input Impedance 4 PACKAGE DIMENSIONS A U M Q 1 4 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K M Q R S U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54 R 2 3 B S D K J H C E SEATING PLANE EMITTER BASE EMITTER COLLECTOR CASE 211–07 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5