MRF448

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF448/D The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% • Intermodulation Distortion @ 250 W (PEP) — IMD = –30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR MRF448 250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 50 100 4.0 16 20 290 1.67 –65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued) NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions. 1 MRF448 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 10 Vdc) hFE 10 30 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob — 350 450 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) Collector Efficiency (VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA) Intermodulation Distortion (2) (VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz) Electrical Ruggedness (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, VSWR 3:1 at all Phase Angles) GPE η IMD ψ No Degradation in Output Power 12 — — — 14 45 65 –33 — — — –30 dB % (PEP) % (CW) dB NOTE: 2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. + BIAS R1 C3 C4 + CR1 L2 D.U.T. L1 C2 C1 R2 C5 L3 L4 C8 L5 + - L6 + C9 C10 50 Vdc RF OUTPUT RF INPUT C7 C6 C1, C2, C5, C7 — 170–780 pF, Arco 469 C3, C8, C9 — 0.1 µF, 100 V Erie C4 — 500 µF @ 6.0 V C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel C10 — 10 µF, 100 V R1 — 10 Ω, 10 Watt R2 — 10 Ω, 1.0 Watt CR1 — 1N4997 or equivalent L1 — 3 Turns, #16 Wire, 0.4″ I.D., 0.3″ Long L2 — 0.8 µH, Ohmite Z–235 or equivalent L3 — 12 Turns, #16 Enameled Wire Closewound 0.25″ I.D. L4 — 4 Turns, 1/8″ Copper Tubing, 0.6″ I.D., 1.0″ Long L5, L6 — 2.0 µH, Fair–Rite 2643021801 Ferrite bead each or equivalent Figure 1. 30 MHz Test Circuit Schematic 2 400 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) f = 30 MHz ICQ = 250 mA 400 f = 30, 30.001 MHz ICQ = 250 mA IMD = d3 IMD = -30 dB 300 VCC = 50 V 40 V 300 200 200 -35 dB 100 100 0 0 4 12 8 Pin, INPUT POWER (WATTS) 16 20 0 20 40 50 30 VCC, SUPPLY VOLTAGE (VOLTS) 60 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 25 Pout , OUTPUT POWER (WATTS CW) 20 G PE , POWER GAIN (dB) 15 10 5 0 400 350 300 250 200 150 TC = 50°C 100°C f = 30 MHz ICQ = 250 mA VCC = 50 V VCC = 50 V ICQ = 250 mA Pout = 250 W 2 4 7 10 f, FREQUENCY (MHz) 15 30 1 3 5 10 30 50 OUTPUT VSWR Figure 4. Power Gain versus Frequency Figure 5. RF SOAR (Class AB) Pout versus Output VSWR IMD, INTERMODULATION DISTORTION (dB) 250 200 VCC = 30 V -25 -30 -35 -40 -45 -50 d5 d3 VCC = 50 V f = 30, 30.001 MHz 15 V f T (MHz) 150 100 50 0 0 10 15 5 IC, COLLECTOR CURRENT (AMPS) 20 25 75 125 175 225 275 Pout, OUTPUT POWER (WATTS PEP) Figure 6. fT versus Collector Current Figure 7. IMD versus Pout 3 20 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) 16 12 4000 3000 RP 8 4 0 2000 1000 0 30 1.5 2 4 7 10 f, FREQUENCY (MHz) 15 20 Figure 8. Output Resistance and Capacitance versus Frequency 30 15 7.0 4.0 f = 2.0 MHz Zo = 10 Ω VCC = 50 V ICQ = 150 mA Pout = 250 W PEP f MHz 2.0 4.0 7.0 15 30 Zin Ohms 4.50 - j1.40 3.10 - j1.80 1.70 - j1.75 0.80 - j1.25 0.60 - j0.75 Figure 9. Series Equivalent Impedance 4 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) CP 5000 VCC = 50 V ICQ = 250 mA Pout = 250 W PEP PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5