MRF454

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF454/D The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50% MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 25 45 4.0 20 250 1.43 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF454 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W CASE 211–11, STYLE 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 18 36 4.0 — — — — — — Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 40 — 150 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob — — 250 pF FUNCTIONAL TESTS (Figure 1) Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Series Equivalent Input Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Series Equivalent Output Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Parallel Equivalent Input Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Parallel Equivalent Output Impedance (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Gpe η Zin Zout — — 12 50 — — — — — — .938–j.341 1.16–j.201 1.06 Ω 1817 pF 1.19 Ω 777 pF — — — — — — dB % Ohms Ohms — — REV 1 1 L5 + C5 L3 C6 C7 C8 12.5 Vdc - RF OUTPUT RF INPUT C2 C1 L1 DUT C3 L2 R1 C4 L4 C1, C2, C4 — ARCO 469 C3 — ARCO 466 C5 — 1000 pF, UNELCO C6, C7 — 0.1 µF Disc Ceramic C8 — 1000 µF/15 V Electrolytic R1 — 10 Ohm/1.0 Watt, Carbon L1 — 3 Turns, #18 AWG, 5/16″ I.D., 5/16″ Long L2 — VK200–20/4B, FERROXCUBE L3 — 12 Turns, #18 AWG Enameled Wire, 1/4″ I.D., Close Wound L4 — 3 Turns 1/8″ O.D. Copper Tubing, 3/8″ I.D., 3/4″ Long L5 — 7 FERRITE Beads, FERROXCUBE #56–590–65/3B Figure 1. 30 MHz Test Circuit Schematic 120 Pout , OUTPUT POWER (WATTS) VCC = 13.6 V 12.5 V Pout , OUTPUT POWER (WATTS) 105 90 75 60 45 30 15 0 0 f = 30 MHz 1 2 3 4 5 6 7 8 9 10 Pin, INPUT POWER (WATTS) 120 105 90 75 60 45 30 15 0 8 f = 30 MHz 9 10 11 12 13 14 15 16 17 18 VCC, SUPPLY VOLTAGE (VOLTS) 1.75 W Pin = 5 V 3.5 W Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage REV 1 2 PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 1 3