TVB200SA

Tyco/Electronics Raychem Corporation 308 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PolySwitch® SiBar Thyristor Surge Protectors PRODUCT: TVB200SA DOCUMENT: 24304 PCN: 732781 REV LETTER: B REV DATE: AUGUST 16, 2001 PAGE NO.: 1 OF 2 Specification Status: RELEASED PHYSICAL DESCRIPTION A MIN MAX MIN B MAX MIN C MAX MIN D* MAX MIN H MAX MIN J MAX MIN K MAX P REF MIN S MAX mm: 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 .051 in: .160 .180 .130 .150 .075 .095 .077 .083 .002 * D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P Other Physical Characteristics .152 .006 0.15 .006 0.30 .012 0.76 .030 1.27 .050 0.51 .020 5.21 .205 5.59 .220 Form Factor: Lead Material: Encapsulation Material: Solderability: Solder Heat Withstand: Solvent Resistance: Mechanical Shock: SMB (Surface Mount DO-214 Package) Tin/lead finish Epoxy, meets UL94 V-0 requirements per MIL-STD-750, Method 2026 per MIL-STD-750, Method 2031 per MIL-STD-750, Method 1022 per MIL-STD-750, Method 2016 Tape and Reel packaging per EIA 481-1 Tyco/Electronics Raychem Corporation 308 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PolySwitch® SiBar Thyristor Surge Protectors PRODUCT: TVB200SA DOCUMENT: 24304 PCN: 732781 REV LETTER: B REV DATE: AUGUST 16, 2001 PAGE NO.: 2 OF 2 DEVICE RATINGS @ 25º C (Both Polarities) Parameter Off-State Voltage, Maximum at ID = 5 µA Non-Repetitive Peak Impulse Current Double exponential waveform (Notes 1 and 2) 10x1000 µsec 10/560 µsec 10/160 µsec Symbol VDM IPP1 IPP2 IPP3 Value 200 50 70 100 Units V A A A Critical Rate of Rise of On-State Current Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak DEVICE THERMAL RATINGS Storage Temperature Range Operating Temperature Range Blocking or conducting state Overload Junction Temperature Maximum; Conducting state only di/dt 150 A/µs TSTG TA TJ -65 to 150 -40 to 125 +175 ºC ºC ºC ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted) Characteristics Symbol Min Breakover Voltage (+25ºC) ---VBO dV/dt = 100V/µsec, ISC=1.0A, VDC = 1000V Breakover Voltage f=60Hz, ISC=1.0Arms, VOC = 1000Vrms, R=1.0 kΩ, t = 0.5 cycle (Note 2) Breakover Voltage Temperature Coefficient Off-State Current (+25ºC) VBO ---- Typ 260 260 Max 320 320 Units V V On-State Voltage PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2) Breakover Current Holding Current (Note 2) Critical Rate of Rise of Off-State Voltage (Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC) Capacitance (f=1.0 Mhz, 50VDC bias, 1 Vrms) (f=1.0 Mhz, 2VDCbias, 15mVrms) Note 1. Allow cooling before test second polarity Note 2. Measured under pulse conditions to reduce heating (VD1= 50V) (VD2= VDM) (IT=1A) dVBO/dTJ ID1 ID2 VT IBO IH dv/dt C1 C2 ---------------175 2000 ------- 0.08 ------------230 350 ---20 50 ----2.0 5.0 5.0 -------------- %/ºC µA µA V mA mA V/µs pF pF VOLTAGE-CURRENT CHARACTERISTIC