TVB270SB-L

SiBar Thyristor Surge Protectors TVBxxxSB-L Series Circuit Protection's SiBar thyristor surge protection devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors are designed to assist telecommunication and computer telephony equipment in meeting the applicable requirements and industry specifications. Benefits: Features: • RoHS compliant • Helps provide protection for sensitive telecom electronic equipment • Low leakage current • Low power dissipation • Fast, reliable operation • No wear-out mechanisms • Helps designers meet worldwide telecom standards • Helps reduce warranty and service costs • Easy installation • Helps improve power efficiency of equipment • Bidirectional crowbar transient voltage protection • Broad voltage range 200V – 300V • High off-state impedance • Low on-state voltage • High surge capability • Short-circuit failure mode • Surface-mount technology • DO-214AA SMB package • 10 x 1000 μs 75A and 80A surge rating • Helps equipment comply with TIA-968, Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45 Applications: • Modems • Fax machines • Set top boxes • POS systems • Phones, answering machines • Analog and digital linecards (xDSL , T1/E1...) • PBX systems • Other customer premise and central office network equipment requiring protection Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. 1 Status: Released Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Table SB1 - Electrical Characteristics Part Number TVB200SB-L TVB270SB-L TVB300SB-L VDM Max. (V) 200 275 300 VBO Max. (V) 320 350 400 IH Min. (mA) 150 150 150 VT Max. (V) 4 4 4 C1 (Typ) @50VDC Bias (pF) 30 25 21 C2 (Typ) @2VDC Bias (pF) 49 50 42 Off-State Current @VDM (μA) 5 5 5 Notes: All electrical characteristics are measured at 25°C. VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA. VBO measured at 100V/µs. Table SB2 – Surge Current Rating TIA-968 Type A Part Number TVBxxxSB-L Ipp(A) 5 x 320 µs 100 Type B Ipp(A) pp (A) 10 x 560 µs 10 x 160 µs 100 150 Ipp (A) Ipp (A) 10 x 1000 µs 2 x 10 µs 80 250 Ipp (A) 8 x 20 µs 250 ITSM IPP (A) di/dt dV/dt 5 x 310 μs Min. (A/µs) (V/µs) (VOC: 10 x 700μs) (A) 100 30 500 2000 Telcordia GR-1089* IEC61000-4-5 ITU K.20/21/45* Notes: *Lightning current wave forms for applicable industry specification. ITSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25°C) Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. 2 Status: Released Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Table SB3 – Dimensions in Millimeters A Dimension TVBxxxSB-L Min. 4.06 (0.160) H Dimension TVBxxxSB-L Min. 0.051 (0.002) Max. 0.200 (0.008) Min. 0.150 (0.006) Max. 4.57 (0.180) Min. 3.30 (0.130) J Max. 0.31 (0.012) Min. 0.76 (0.030) B Max. 3.94 (0.155) Min. 1.90 (0.075) K Max. 1.27 (0.050) C Max. 2.41 (0.095) P Ref. 0.51 (0.020) Min. 5.21 (0.205) Min. 1.95 (0.077) S Max. 5.59 (0.220) D* Max. 2.20 (0.087) Notes: *D dimension is measured within dimension P. TVB series devices use industry standard SMB package type. All devices are bidirectional and may be oriented in either direction for installation Table SB4 – Physical Characteristics and Environmental Specifications Lead material Encapsulating material Solderability Solder heat withstand Solvent resistance Mechanical shock Vibration Storage temperature (°C) Operating temperature (°C) Junction temperature (°C) Matte tin finish (-L devices) Epoxy, meets UL94V-0 requirements per MIL-STD-750, Method 2026 per MIL-STD-750, Method 2031 per MIL-STD-750, Method 1022 per MIL-STD-750, Method 2016 per MIL-STD-750, Method 2056 -55 to 150 -40 to 125 150 Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260 Table SB5 – Reliability Tests Test High temperature, reverse bias High humidity, high temperature, reverse bias High temperature storage life Temperature cycling Autoclave Conditions +100°C, 50VDC bias 85% RH, +85°C, 50VDC bias +150°C -65°C to +150°C, 15 minute dwell 100% RH, +121°C, 15 PSI Duration 1000 hours 1000 hours 1000 hours 1000 cycles 96 hours Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. 3 Status: Released Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. 4 Status: Released Rev: C Date: APRIL 2, 2009 SiBar Thyristor Surge Protectors TVBxxxSB-L Series Table SB6 – Packaging and Marking Information Recommended Pad Layout (millimeters/inchs) Part Description TVB200SB-L TVB270SB-L TVB300SB-L Tape and Reel Quantity 2,500 2,500 2,500 Standard Package 10,000 10,000 10,000 Part Marking 200B 270B 300B Dimension A (Nom.) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) Dimension B (Nom.) 2.159(0.085) 2.159(0.085) 2.159(0.085) Dimension C (Nom.) 2.743(0.108) 2.743(0.108) 2.743(0.108) Agency Recognition* UL UL UL *UL497B, File # E179610 308 Constitution Drive, MS R21/2A Menlo Park, CA USA 94025-1164 Tel (800) 227-7040 (650) 361-6900 Fax (650) 361-2508 www.circuitproection.com www.circuitprotection.com.hk (Chinese) www.circuitprotection.jp (Japanese) Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks. All other trademarks and copyrights are property of their respective owners. Document: SCD 27171 SiBar Thyristor Surge Protectors © 2007, 2009 Tyco Electronics Corporation. All rights Reserved. 5 Status: Released Rev: C Date: APRIL 2, 2009