LS880FT

LS880FT Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃) CONDITIONS ITEM SYMBOL IF=50mA Power Output PO IF=50mA Forward Voltage VF VR=5V Reverse Current IR λp IF=50mA Peak Wavelength Spectral Line Half Width Δλ IF=50mA IF=50mA Half Intensity Beam Angle θ IFP=50mA Rise Time Tr IFP=50mA Fall Time Tf 1MHz ,V=0V Junction Capacitance Cj IF=10mA Temp. Coefficient of PO P/T IF=10mA Temp. Coefficient of VF V/T RELATIVE POWER vs FORWARD CURRENT 250 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) 200 150 100 50 0 0 1 2 3 0 25 50 75 100 125 FORWARD VOLTAGE(V) FORWARD CURRENT(mA) 120 100 80 60 40 20 0 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) MIN 1.0 TYP 1.8 1.45 880 60 ±30 1.5 0.8 15 -0.5 -1.5 MAX 1.8 10 UNIT mW V μA nm nm deg. μS μS pF %/℃ mV/℃ FORWARD I-V CHARACTERISTICS RADIATION PATTERN FORWARD CURRENT(mA) FEATURES ･High-output Power ･Compact (φ2mm) ･High Reliability in Demanding Environments ① Cathode ② Anode Dimensions (Unit:mm) 120 100 80 60 40 20 0 APPLICATIONS ･Optical Switches ･Edge Sensing (Coin Dispenser) 120 SPECTRAL OUTPUT 1. ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃) ITEM RATINGS SYMBOL Forward Current (DC) 75 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 120 PD -20 TO 85 Operating Temp. Topr -30 TO 100 Storage Temp. Tstg Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body RELATIVE POWER OUTPUT(%) 100 THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) 120 RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 -30 140 FORWARD VOLTAGE(V) 120 100 80 60 40 20 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 1 -30 0 30 60 90 POWER OUTPUT vs TEMPERATURE IF=10mA 1.6 1.5 1.4 1.3 1.2 1.1 FORWARD VOLTAGE vs TEMPERATURE IF=10mA UNIT mA A V mW ℃ ℃ ℃ ℃ 60 40 20 0 780 880 WAVELENGTH(nm) 980 0 30 60 90 AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) OPTRANS To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com 2005/7/6 LS880FT