LSF811C1

LSF811C1 Infrared Emitting Diode ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors ･Medical Application FEATURES ② Cathode ① Anode Dimensions (Unit:mm) SPECTRAL OUTPUT 120 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM SYMBOL RATINGS 60 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP 5 Reverse Voltage VR 120 Power Dissipation PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 100 Junction Temp. Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 100 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 80 60 40 20 0 710 810 WAVELENGTH(nm) 910 To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com LSF811C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA IF=20mA Half Intensity Beam Angle θ IFP=50mA Rise Time Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T IF=10mA Temp. Coefficient of VF V/T RELATIVE POWER vs FORWARD CURRENT 400 RELATIVE POWER OUTPUT(%) 350 300 250 200 150 100 50 0 0 20 40 60 MIN TYP 6.5 1.4 810 30 ±25 − − 60 -0.6 -2.0 MAX UNIT mW 1.9 V 100 μA nm nm deg. nS nS pF %/℃ mV/℃ FORWARD I-V CHARACTERISTICS 80 FORWARD CURRENT(mA) 70 60 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V) RADIATION PATTERN 120 RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 -90 80 -60 -30 0 30 60 90 FORWARD CURRENT(mA) BEAM ANGLE(deg.) THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) 70 60 50 40 30 20 10 0 -30 0 30 60 90 RELATIVE POWER OUTPUT(%) 140 POWER OUTPUT vs TEMPERATURE IF=10mA 1.6 FORWARD VOLTAGE(V) 1.5 1.4 1.3 1.2 1.1 1 -30 FORWARD VOLTAGE vs TEMPERATURE IF=10mA 120 100 80 60 40 20 0 -30 0 30 60 90 910 0 30 60 90 AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃)