LSF872C1S

LSF872C1S 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃) CONDITIONS ITEM SYMBOL IF=50mA Power Output PO IF=50mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=50mA Spectral Line Half Width Δλ IF=50mA IF=50mA Half Intensity Beam Angle θ Junction Capacitance Cj 1MHz ,V=0V Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T Infrared Emitting Diode MIN 14.0 TYP 17.0 1.55 870 45 ±25 50 -0.3 -2.1 MAX 20.0 2.0 10 UNIT mW V μA nm nm deg. pF %/℃ mV/℃ FORWARD I-V CHARACTERISTICS RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors FEATURES ① Anode ② Cathode Dimensions (Unit:mm) 120 100 80 60 40 20 0 RELATIVE POWER vs FORWARD CURRENT 250 200 150 100 50 0 0 25 50 75 100 125 FORWARD CURRENT(mA) RADIATION PATTERN 120 100 80 60 40 20 0 -90 SPECTRAL OUTPUT 120 0 1 2 3 -60 -30 0 30 60 90 FORWARD VOLTAGE(V) BEAM ANGLE(deg.) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃) ITEM RATINGS SYMBOL Forward Current (DC) 60 IF Forward Current (Pulse)*1 0.5 IFP 5 Reverse Voltage VR 100 Power Dissipation PD Operating Temp. Topr -20 TO 85 Storage Temp. Tstg -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body UNIT mA A V mW ℃ ℃ ℃ ℃ 100 RELATIVE POWER OUTPUT(%) THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) 120 RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 -30 140 120 100 80 60 40 20 POWER OUTPUT vs TEMPERATURE IF=10mA 1.6 FORWARD VOLTAGE(V) 1.5 1.4 1.3 1.2 1.1 1 -30 FORWARD VOLTAGE vs TEMPERATURE IF=10mA 60 40 20 0 770 870 WAVELENGTH(nm) 970 0 30 60 90 0 -30 0 30 60 90 0 30 60 90 AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) OPTRANS To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com 2006/5/24