LSF876C1

LSF876C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃) ITEM Power Output Forward Voltage Reverse Current Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle SYMBOL PO VF IR λp Δλ θ CONDITIONS IF=50mA IF=50mA VR=5V IF=50mA IF=50mA IF=50mA MIN 8.0 TYP 18.0 1.5 870 45 ±20 MAX 1.8 10 UNIT mW V μA nm nm deg. FORWARD I-V CHARACTERISTICS 120 100 FORWARD CURRENT(mA) 80 60 40 20 250 RELATIVE POWER vs FORWARD CURRENT FEATURES APPLICATIONS ･High-output Power ･Compact ･High Reliability ･Optical Switches ･Optical Sensors RELATIVE POWER OUTPUT(%) 200 150 100 50 ① Anode ② Cathode Dimensions (Unit:mm) SPECTRAL OUTPUT 120 0 0 1 2 FORWARD VOLTAGE(V) 3 0 0 25 50 75 FORWARD CURRENT(mA) 100 125 RADIATION PATTERN 120 100 RELATIVE POWER OUTPUT(%) 80 60 40 20 FORWARD CURRENT(mA) 60 80 THERMAL DERATING CURVE 1. ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃) ITEM Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temp. Storage Temp. Junction Temp. Lead Soldering Temp.*2 SYMBOL IF IFP VR PD Topr Tstg Tj Tls RATINGS 100 1 5 100 -20 TO 80 -30 TO 100 100 260 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 770 870 WAVELENGTH(nm) 970 27 40 20 *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 0 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) 0 -30 0 30 60 90 AMBIENT TEMPERATURE( ) OPTRANS To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com 11/6/2009 LSF876C1.xls