LSF905C1

LSF905C1 Infrared Emitting Diode ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors ･Medical Application FEATURES ② Cathode ① Anode Dimensions (Unit:mm) SPECTRAL OUTPUT 120 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM SYMBOL RATINGS Forward Current (DC) 60 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 100 PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 100 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 80 60 40 20 0 800 900 WAVELENGTH(nm) 1000 To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com LSF905C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) ITEM CONDITIONS SYMBOL Power Output IF=20mA PO Forward Voltage IF=20mA VF Reverse Current VR=5V IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA Half Intensity Beam Angle IF=20mA θ Rise Time IFP=50mA Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T RELATIVE POWER vs FORWARD CURRENT 400 RELATIVE POWER OUTPUT(%) 350 300 250 200 150 100 50 0 0 20 40 60 MIN TYP 6.0 1.3 910 60 ±25 − − 70 -0.5 -1.6 MAX UNIT mW 1.6 V 100 μA nm nm deg. nS nS pF %/℃ mV/℃ FORWARD I-V CHARACTERISTICS 80 FORWARD CURRENT(mA) 70 60 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V) RADIATION PATTERN 120 RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 -90 80 -60 -30 0 30 60 90 FORWARD CURRENT(mA) BEAM ANGLE(deg.) THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) 70 60 50 40 30 20 10 0 -30 0 30 60 90 RELATIVE POWER OUTPUT(%) 140 POWER OUTPUT vs TEMPERATURE IF=10mA 1.6 FORWARD VOLTAGE(V) 1.5 1.4 1.3 1.2 1.1 1 -30 FORWARD VOLTAGE vs TEMPERATURE IF=10mA 120 100 80 60 40 20 0 -30 0 30 60 90 1000 0 30 60 90 AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃)