MTD8060W_2

MTD8060W Photo Transistor Features: • High Reliability in Demanding Environments Applications: • Optical Switches • Optical Sensors • Fiber Optic Communications • Optical Detectors Absolute Maximum Ratings (Ta=25ºC) Items Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Emitter Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Junction Temperature Lead Soldering Temp*1 Symbol Vceo Vcbo Vebo Veco Ic Pc Topr Tstg Tj Tsol Ratings 30 30 5 5 50 250 -30 ~ +100 -40 ~ +125 125 260 Unit V V V V mA mW ºC ºC ºC ºC *1: Time 5 Sec max, Position: Up to 3mm from the body. Electrical & Optical Characteristics (Ta = 25ºC) Items Symbol Conditions Min 2 Collector Emitter Current Icel Vce=20V, Ee=0.5mW/cm * -Collector Dark Current Iceo Vce=20V, Ee=mW/cm2* -C-E Saturation Voltage VCE(sat) Ic=0.2mA, Ee=5mW/cm2* -Spectral Sensitivity λ --Peak Sensitivity Wavelength λp --Switching time (Rise Time) Tr RL=100Ω , Vce=5V, Ic=0.5mA -Switching time (Fall Time) Tf RL=100Ω , Vce=5V, Ic=0.5mA -Angular Response θ --*Color Temperature = 2870ºK Standard Tungsten Lamp Typ Max 1.0 --100 0.2 -400~1100 -880 -10 -10 -±55 -- Unit mA nA V nm nm μS μS deg www.marktechopto.com 800.984.5337 MTD8060W Graphs: ICEL vs VCE 6 COLLECTOR CURRENT (mA) ICEL vs IRRADIANCE 8 120 RELATIVE C0LLECTOR ANGULAR DISPLACEMENT 5 4 3 2 1 0 05 2.5mW/cm 2.0mW/cm COLLECTOR CURRENT (mA ) 2 2 100 CURRENT(%) 6 80 60 40 20 0 1.5mW/cm 2 1.0mW/cm 2 0.5mW/cm 2 4 2 0 10 VCE (V) 15 20 01234 IRRADIANCE(mW/cm2) 5 -90 -60 -300 30 60 90 ANGULAR DISPLACEMENT (deg.) THERMAL DERATING CURVE 300 250 DISSIPATION (mW) RELATIVE RESPONSE vs λ 120 RELATIVE RESPONSE(%) COLLECTOR POWER 100 80 60 40 20 0 200 150 100 50 0 -40- 20 02 04 06 08 01 00 120 AMBIENT TEMPERATURE(℃) 4005 00 6007 00 8009 00 1000 1100 1200 WAVELENGTH(nm) www.marktechopto.com 800.984.5337