MTE8090M_09

MTE8090M Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃) ITEM SYMBOL CONDITIONS Power Output PO IF=20mA Forward Voltage VF IF=20mA Reverse Current IR VR=5V Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA Half Intensity Beam Angle IF=20mA θ Rise Time IFP=50mA Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T RELATIVE POWER vs FORWARD CURRENT 250 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) 200 150 100 50 0 0 10 20 30 40 50 60 FORWARD CURRENT(mA) MIN TYP 4.5 1.3 880 60 ±80 1.5 0.8 15 -0.5 -1.5 MAX UNIT mW 1.6 V 10 μA nm nm deg. μS μS pF %/℃ mV/℃ FORWARD I-V CHARACTERISTICS FORWARD CURRENT(mA) RADIATION PATTERN 120 100 80 60 40 20 0 -90 ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors FEATURES ② Anode ① Cathode Dimensions (Unit:mm) 60 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V) SPECTRAL OUTPUT 120 -60 -30 0 30 60 90 BEAM ANGLE(deg.) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃) RATINGS ITEM SYMBOL 50 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP Reverse Voltage 5 VR Power Dissipation 100 PD -20 TO 85 Topr Operating Temp. -30 TO 100 Tstg Storage Temp. 100 Junction Temp. Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 100 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) 60 RELATIVE POWER OUTPUT(%) 50 40 30 20 10 0 -30 POWER OUTPUT vs TEMPERATURE IF=10mA 140 FORWARD VOLTAGE(V) 120 100 80 60 40 20 0 -30 0 30 60 90 3 2.5 2 1.5 1 0.5 0 -30 FORWARD VOLTAGE vs TEMPERATURE IF=10mA 60 40 20 0 780 880 WAVELENGTH(nm) 980 0 30 60 90 AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) 0 30 60 90 AMBIENT TEMPERATURE(℃) OPTRANS To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com 11/24/2009 001-LSC880M3A.xls