MTE8700N_2

MTE8700N Infrared Emitting Diode Features: • High Output Power • Parallel Rays (Excellent) • High Reliability in Demanding Environments Applications: • Optical Switches • Linear & Rotary Encoder Absolute Maximum Ratings (Ta=25ºC) Items Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temperature Storage Temperature Junction Temperature Lead Soldering Temp*2 Symbol IF IFP VR PD Topr Tstg Tj Tls Ratings 100 1.0 5 200 -30 ~ +100 -40 ~ +125 125 260 Unit mA A V mW ºC ºC ºC ºC *1: Tw=10μS, T=10mS *2: Time 5 Sec max, Position: Up to 3mm from the body. Dimensions (Unit:mm) www.marktechopto.com 800.984.5337 MTE8700N Electrical & Optical Characteristics (Ta = 25ºC) Items Power Output Forward Voltage Reverse Current Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle Junction Capacitance Temp. Coefficient of PO Temp Coefficient of VF Symbol PO VF IR λp Δλ θ Cj P/T V/T Conditions IF=50mA IF=50mA VR=5V IF=50mA IF=50mA IF=50mA ± 1MHz, V=0V IF=10mA IF=10mA Min ---------Typ 6.5 1.55 -870 45 ±4 50 -0.3 -2.1 Max -2.0 10 ------Unit mW V μA nm nm deg. pF %/ºC mV/ºC Graphs: www.marktechopto.com 800.984.5337