0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
TLFGE19TP

TLFGE19TP

  • 厂商:

    MARKTECH

  • 封装:

  • 描述:

    TLFGE19TP - TOSHIBA InGaAâ„“P LED - Marktech Corporate

  • 数据手册
  • 价格&库存
TLFGE19TP 数据手册
TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) TOSHIBA InGaAℓP LED TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) Panel Circuit Indicator Unit: mm • • • • • • • • • • Lead(Pb)-free products (lead: Sn-Ag-Cu) 5 mm package InGaAℓP technology All plastic mold type Transparent lens Lineup: 3colors (pure green, green, pure yellow) High intensity light emission Excellent low current light output Applications: Traffic signals, Safety equipment, Backlight Stopper lead type is also available TLPGE19T(F), TLFGE19T(F), TLGE19T(F), TLPYE19T(F) Lineup Product Name TLPGE19TP(F) TLFGE19TP(F) TLGE19TP(F) TLPYE19TP(F) Color Pure Green Green Green Pure Yellow Material JEDEC InGaAlP ― ― ― JEITA TOSHIBA Weight: 0.31 g Maximum Ratings (Ta = 25°C) Product Name TLPGE19TP(F) TLFGE19TP(F) TLGE19TP(F) TLPYE19TP(F) Forward Current IF (mA) 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) −40~100 −40~120 For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com 1 2005-09-12 TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength Luminous Intensity IV Min 153 272 476 476 Typ. 500 800 1300 2000 mcd IF 20 20 20 20 mA Forward Voltage VF Typ. 2.1 2.0 2.0 2.0 V Max 2.4 2.4 2.4 2.4 IF 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 VR 4 4 4 4 V λd TLPGE19TP(F) TLFGE19TP(F) TLGE19TP(F) TLPYE19TP(F) Unit 558 565 571 580 λP (562) (568) (574) (583) nm ∆λ 14 15 17 14 IF 20 20 20 20 mA µA Precautions • • • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2005-09-12 TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) TLPGE19TP(F) IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 1000 Forward current 10 5 3 100 1 1.6 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20 20 5 3 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 0 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 80 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2005-09-12 TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) TLFGE19TP(F) IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 2.0 2.1 1000 Forward current 10 5 3 100 1 1.6 1.8 1.9 2.2 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20 5 3 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 80 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2005-09-12 TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) TLGE19TP(F) IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1000 Forward current 10 5 3 100 1 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20 0 20 40 60 80 5 3 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern IF – Ta Allowable forward current IF (mA) 60° 70° 80° 90° 1.0 Ta = 25°C 80 60 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2005-09-12 TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) TLPYE19TP(F) IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 3000 Forward current 1000 10 5 3 300 100 50 1 1.6 2.3 1 3 10 30 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 5 3 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 −20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 80 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2005-09-12 TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) 7 2005-09-12
TLFGE19TP 价格&库存

很抱歉,暂时无法提供与“TLFGE19TP”相匹配的价格&库存,您可以联系我们找货

免费人工找货