TLOH30TP

TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TOSHIBA InGaAℓP LED TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) Panel Circuit Indicator Unit: mm • • • • • • • • • • Lead(Pb)-free products (lead: Sn-Ag-Cu) 5 mm package InGaAℓP technology All plastic mold type Transparent lens High intensity light emission Excellent low current light output Applications: Traffic signals, Safety equipment, Backlight Stopper lead type is also available. TLRH30T(F) , TLRMH30T(F), TLSH30T(F), TLOH30T(F), TLYH30T(F) C athode index 8.55±0.2 (1.0) Lineup: 3colors (red, orange, yellow) Lineup Product Name TLRH30TP(F) TLRMH30TP(F) TLSH30TP(F) TLOH30TP(F) TLYH30TP(F) Color Red Red Red Orange Yellow Material 1. ANODE 2. CATHODE JEDEC InGaAlP ― ― ― JEITA TOSHIBA Weight: 0.29 g Maximum Ratings (Ta = 25°C) Product Name TLRH30TP(F) TLRMH30TP(F) TLSH30TP(F) TLOH30TP(F) TLYH30TP(F) 50 4 120 −40~100 −40~120 Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com 1 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength λd λP ∆λ Luminous Intensity IV Min 272 476 476 476 476 Typ. 680 950 1300 1600 1350 mcd IF 20 20 20 20 20 mA Forward Voltage VF Typ. 1.9 1.9 2.0 2.0 2.0 V Max 2.4 2.4 2.4 2.4 2.4 IF 20 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 50 µA IF 20 20 20 20 20 mA VR 4 4 4 4 4 V TLRH30TP(F) TLRMH30TP(F) TLSH30TP(F) TLOH30TP(F) TLYH30TP(F) Unit 630 626 613 605 587 (644) (636) (623) (612) (590) nm 13 13 13 13 13 Precautions • • • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device) If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLRH30TP(F) IF – V F 100 Ta = 25°C 50 30 IV – IF 10000 5000 3000 Ta = 25°C (mA) (mcd) IV Luminous intensity IF 1000 500 300 Forward current 10 5 3 100 50 30 1 1.6 10 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IV Relative luminous intensity Relative luminous intensity −20 0 20 40 60 80 5 3 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) IF – Ta (mA) IF Allowable forward current 60° 70° 80° 90° 90° 1.0 Radiation pattern 80 Ta = 25°C 30° 40° 50° 60° 70° 20° 10° 0° 10° 20° 30° 40° 50° 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLRMH30TP(F) IF – V F 100 Ta = 25°C 50 30 10000 5000 3000 Ta = 25°C IV – IF (mA) IV Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 10 5 3 1 1.6 (mcd) IF 1000 500 300 Forward current 100 50 30 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA IV Relative luminous intensity 5 3 Ta = 25°C 0.8 Relative luminous intensity 0.6 1 0.5 0.3 0.4 0.2 0.1 −20 0 20 40 60 80 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern (mA) IF – Ta 80 IF Allowable forward current 60° 70° 80° 90° 1.0 Ta = 25°C 30° 40° 50° 60° 70° 20° 10° 0° 10° 20° 30° 40° 50° 60 40 20 90° 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLSH30TP(F) IF – V F 100 Ta = 25°C 50 30 10000 5000 3000 Ta = 25°C IV – IF (mA) IV Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 2.3 10 5 3 1 1.6 (mcd) IF 1000 500 300 Forward current 100 50 30 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 Relative luminous intensity – Wavelength 1.0 IF = 20 mA Ta = 25°C IV Relative luminous intensity 5 3 Relative luminous intensity 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 −20 0 20 40 60 80 0 560 580 600 620 640 660 680 Case temperature Tc (°C) Wavelength λ (nm) IF – Ta (mA) IF Allowable forward current 60° 70° 80° 90° 90° 1.0 Radiation pattern 80 Ta = 25°C 30° 40° 50° 60° 70° 20° 10° 0° 10° 20° 30° 40° 50° 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLOH30TP(F) IF – V F 100 50 30 10000 Ta = 25°C 5000 3000 Ta = 25°C IV – IF (mA) IV Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 2.3 10 5 3 1 1.6 (mcd) IF 1000 500 300 Forward current 100 50 30 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 Relative luminous intensity – Wavelength 1.0 IF = 20 mA Ta = 25°C IV Relative luminous intensity 5 3 Relative luminous intensity 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 −20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) IF – Ta (mA) IF Allowable forward current 60° 70° 80° 90° 90° 1.0 Radiation pattern 80 Ta = 25°C 30° 40° 50° 60° 70° 20° 10° 0° 10° 20° 30° 40° 50° 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) TLYH30TP(F) IF – V F 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF (mA) (mcd) IV Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 2.3 5000 3000 IF 1000 500 300 Forward current 10 5 3 100 50 30 1 1.6 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 Relative luminous intensity – Wavelength 1.0 IF = 20 mA Ta = 25°C IV Relative luminous intensity 5 3 Relative luminous intensity 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 −20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern (mA) IF – Ta 80 IF Allowable forward current 60° 70° 80° 90° 1.0 Ta = 25°C 30° 40° 50° 60° 70° 20° 10° 0° 10° 20° 30° 40° 50° 60 40 20 90° 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 7 2006-09-29 TLRH30TP(F),TLRMH30TP(F),TLSH30TP(F),TLOH30TP(F),TLYH30TP(F) RESTRICTIONS ON PRODUCT USE 000707EAC • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 8 2006-09-29