TLPGE1100B

TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TOSHIBA LED Lamps TLRE1100B(T11), TLSE1100B(T11), TLOE1100B(T11), TLYE1100B(T11), TLGE1100B(T11), TLFGE1100B(T11) TLPGE1100B(T11) Panel Circuit Indicator • • • • • • • • • • Surface-mount devices 3.2 (L) × 2.8 (W) × 1.9 (H) mm Flat-top type InGaAℓP LEDs High luminous intensity Low drive current, high-intensity light emission Colors: red, orange, yellow, green, pure green Pb-free reflow soldering is possible Applications: automotive use, message signboards, backlighting etc. Standard embossed tape packing: T11 (2000/reel) 8-mm tape reel Unit: mm Color and Material Product Name TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B Color Red Red Orange Yellow Green Green Pure Green InGaAℓP Material JEDEC JEITA TOSHIBA Weight: 0.035 g (typ.) ― ― 4-3R1 For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com 1 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Maximum Ratings (Ta = 25°C) Product Name TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B 50 4 120 −40~100 −40~100 Forward Current IF (mA) Please see Note 1 Reverse Voltage VR (V) Power Dissipation PD (mW) Operation Temperature Topr (°C) Storage Temperature Tstg (°C) Note 1: Forward current derating IF – Ta 80 IF (mA) Allowable forward current 60 40 20 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C)) Electrical Characteristics (Ta = 25°C) Product Name Min TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B Unit 1.6 1.6 1.6 1.6 1.6 1.6 1.6 Forward Voltage VF Typ. 1.9 1.9 2.0 2.0 2.0 2.0 2.1 V Max 2.4 2.4 2.4 2.4 2.4 2.4 2.4 mA µA V 20 10 4 IF Reverse Current IR Max VR 2 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Optical Characteristics–1 (Ta = 25°C) Product Name TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B Unit Luminous Intensity IV Min 40 63 63 63 40 25 10 mcd Typ. 100 180 150 150 100 45 25 mcd Max 320 500 500 500 320 125 50 mcd IF 20 20 20 20 20 20 20 mA Available Iv rank Please see Note 2 PA / QA / RA / SA QA / RA / SA / TA QA / RA / SA / TA QA / RA / SA / TA PA / QA / RA / SA NA / PA / QA LA / MA / NA Note 2: The specification on the above table is used for Iv classification of LEDs in Toshiba facility. Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned. Luminous Intensity IV Min 10 16 25 40 63 100 160 250 mcd Max 20 32 50 80 125 200 320 500 mcd Rank LA MA NA PA QA RA SA TA Unit Optical Characteristics–2 (Ta = 25°C) Emission Spectrum Product Name Peak Emission Wavelength λp Min TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B Unit Typ. 644 623 612 590 574 568 562 nm Max ∆λ Typ. 18 15 15 15 13 11 11 nm Dominant Wavelength λd Min 624 607 599 581 565 561 555 Typ. 630 613 605 587 571 565 558 nm Max 638 621 613 595 576 569 564 mA 20 IF ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ The cautions • • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by the IR light. This product is designed as a general display light source usage, and it has applied the measurement standard that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional application (ex. Light source for sensor, optical communication and etc) except general display light source. 3 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLRE1100B IF – V F 50 Ta = 25°C (typ.) 1000 Ta = 25°C IV – IF (typ.) (mcd) Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 (mA) 30 500 300 IF Forward current 10 IV 100 5 3 50 30 1 1.6 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 (typ.) 1.0 Wavelength characteristic (typ.) IV 5 IF = 20 mA Ta = 25°C Relative luminous intensity 0 25 50 75 100 Relative luminous intensity 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 −25 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (typ.) 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 4 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLSE1100B IF – V F 100 50 30 Ta = 25°C (typ.) 1000 Ta = 25°C IV – IF (mcd) (typ.) (mA) 500 300 IF 10 Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 Forward current IV 100 5 3 50 30 1 1.6 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 (typ.) 1.0 Wavelength characteristic (typ.) IV 5 IF = 20 mA Ta = 25°C Relative luminous intensity 0 25 50 75 100 Relative luminous intensity 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 −25 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (typ.) 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 5 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLOE1100B IF – V F 100 Ta = 25°C 50 30 (typ.) 1000 Ta = 25°C IV – IF (typ.) (mcd) Luminous intensity 1.8 1.9 2.0 2.1 2.2 2.3 (mA) 500 300 Forward current IF 10 5 3 IV 100 50 30 1 1.7 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 (typ.) Wavelength characteristic 1.0 (typ.) IV Relative luminous intensity 5 3 IF = 20 mA Ta = 25°C 0.8 Relative luminous intensity 0.6 1 0.5 0.3 0.4 0.2 1 −25 0 25 50 75 100 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (typ.) 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 6 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLYE1100B IF – V F 100 Ta = 25°C 50 30 (typ.) (mcd) IV – IF 1000 Ta = 25°C 500 300 (typ.) (mA) IF 10 5 3 Luminous intensity Forward current IV 1 1.7 100 50 1.8 1.9 2.0 2.1 2.2 2.3 20 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 (typ.) Wavelength characteristic 1.0 (typ.) IV Relative luminous intensity 5 3 IF = 20 mA Ta = 25°C 0.8 Relative luminous intensity 0.6 1 0.4 0.5 0.3 0.2 0.1 −25 0 25 50 75 100 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (typ.) 10° 0° 10° 30° 40° 50° 60° 70° 80° 90° 20° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 7 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLGE1100B IF – V F 100 Ta = 25°C 50 30 (typ.) (mcd) IV – IF 1000 Ta = 25°C 500 300 (typ.) (mA) IF Luminous intensity 1.8 1.9 2.0 2.1 2.2 2.3 Forward current IV 10 5 3 100 50 30 1 1.7 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 (typ.) Wavelength characteristic 1.0 (typ.) IV Relative luminous intensity 5 3 IF = 20 mA Ta = 25°C 0.8 Relative luminous intensity 0.6 1 0.5 0.3 0.4 0.2 0.1 −25 0 25 50 75 100 0 540 560 580 600 620 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (typ.) 10° 0° 30° 40° 50° 60° 70° 80° 90° 20° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 8 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLFGE1100B IF – V F 100 Ta = 25°C 50 30 (typ.) (mcd) IV – IF 100 Ta = 25°C 50 30 (typ.) (mA) IF 10 5 3 Luminous intensity 1.8 1.9 2.0 2.1 2.2 2.3 Forward current IV 10 5 3 1 1.7 1 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 (typ.) Wavelength characteristic 1.0 (typ.) IV Relative luminous intensity 5 3 IF = 20 mA Ta = 25°C 0.8 Relative luminous intensity 0.6 1 0.5 0.3 0.4 0.2 0.1 −25 0 25 50 75 100 0 540 560 580 600 620 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (typ.) 10° 0° 30° 40° 50° 60° 70° 80° 90° 20° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 9 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLPGE1100B IF – V F 100 Ta = 25°C 50 (typ.) (mcd) 100 Ta = 25°C 50 30 IV – IF (typ.) (mA) 30 IF 10 Luminous intensity 1.8 1.9 2.0 2.1 2.2 2.3 Forward current IV 10 5 3 5 3 1 1.7 1 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 (typ.) 1.0 Wavelength characteristic IF = 20 mA Ta = 25°C (typ.) IV Relative luminous intensity 0 25 50 75 100 5 3 Relative luminous intensity 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 −25 0 520 540 560 580 600 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (typ.) 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 10 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Packaging These LED devices are packed in an aluminum envelope with a silica gel and a moisture indicator to avoid moisture absorption. The optical characteristics of the devices may be affected by exposure to moisture in the air before soldering and they should therefore be stored under the following conditions: 1. This moisture proof bag may be stored unopened within 12 months at the following conditions. Temperature: 5°C~30°C Humidity: 90% (max) 2. After opening the moisture proof bag, the devices should be assembled within 168 hours in an environment of 5°C to 30°C/60% RH or below. 3. If upon opening, the moisture indicator card shows humidity 30% or above (Color of indication changes to pink) or the expiration date has passed, the devices should be baked in taping with reel. After baking, use the baked devices within 72 hours, but perform baking only once. Baking conditions: 60±5°C, for 12 to 24 hours. Expiration date: 12 months from sealing date, which is imprinted on the same side as this label affixed. 4. Repeated baking can cause the peeling strength of the taping to change, then leads to trouble in mounting. Furthermore, prevent the devices from being destructed against static electricity for baking of it. 5. If the packing material of laminate would be broken, the hermeticity would deteriorate. Therefore, do not throw or drop the packed devices. Mounting Method Soldering • Reflow soldering (example) Temperature profile for Pb soldering (example) 10 s max (*) 240°C max Package surface temperature (°C) Temperature profile for Pb-free soldering (example) 5 s max(*) 260°C max Package surface temperature (°C) (*) (*) 4°C/s max (*) 140~160°C max(*) 4°C/s max(*) 60~120 s max(*) Time (s) 4°C/s max(*) max(*) 150~180°C 230°C (*) 4°C/s max max(*) 60~120 s Time 30~50s max(*) (s) • • • • The products are evaluated using above reflow soldering conditions. No additional test is performed exceed the condition (i.e. the condition more than (*)MAX values) as a evaluation. Please perform reflow soldering under the above conditions. Please perform the first reflow soldering with reference to the above temperature profile and within 168 h of opening the package. Second reflow soldering In case of second reflow soldering should be performed within 168 h of the first reflow under the above conditions. Storage conditions before the second reflow soldering: 30°C, 60% RH (max) Make any necessary soldering corrections manually. (only once at each soldering point) Soldering iron : 25 W Temperature : 300°C or less Time : within 3 s If the products need to be performed by other soldering method (ex. wave soldering), please contact Toshiba sales representative. • Recommended soldering pattern 1.65 1.15 1.65 2.41 Unit: mm 11 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Cleaning When cleaning is required after soldering, Toshiba recommends the following cleaning solvents. It is confirmed that these solvents have no effect on semiconductor devices in our dipping test (under the recommended conditions). In selecting the one for your actual usage, please perform sufficient review on washing condition, using condition and etc. ASAHI CLEAN AK-225AES KAO CLEAN TROUGH 750H PINE ALPHA ST-100S TOSHIBA TECHNOCARE (FRW-17, FRW-1, FRV-100) : (made by ASAHI GLASS) : (made by KAO) : (made by ARAKAWA CHEMICAL) : (made by GE TOSHIBA SILICONES) Precautions when Mounting Do not apply force to the plastic part of the LED under high-temperature conditions. To avoid damaging the LED plastic, do not apply friction using a hard material. When installing the PCB in a product, ensure that the device does not come into contact with other cmponents. Tape Specifications 1. Product number format The type of package used for shipment is denoted by a symbol suffix after the product number. The method of classification is as below. (this method, however does not apply to products whose electrical characteristics differ from standard Toshiba specifications) (1) Tape Type: T14 (4-mm pitch) (2) Example TLRE1100B (T11) Tape type Toshiba product No. 2. Tape dimensions Unit: mm Symbol D E P0 t F D1 Dimension 1.5 1.75 4.0 0.3 3.5 1.5 Tolerance +0.1/−0 ±0.1 ±0.1 ±0.05 ±0.05 ±0.1 Symbol P2 W P A0 B0 K0 Dimension 2.0 8.0 4.0 2.9 3.7 2.3 Tolerance ±0.05 ±0.3 ±0.1 ±0.1 ±0.1 ±0.1 P0 D P2 E F W t K0 B0 Polarity P A0 D1 12 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 3. Reel dimensions Unit: mm 9 ± 0.3 11.4 ± 1.0 +0 180 −4 2 ± 0.5 4. Leader and trailer sections of tape 40 mm or more (Note 1) 40 mm or more (Note 2) Leading part: 190 mm (min) Note1: Empty trailer section Note2: Empty leader section φ13 φ60 φ44 13 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 5. Packing form (1) Packing quantity Reel Carton 2,000 pcs 10,000 pcs (2) Packing form: Each reel is sealed in an aluminum pack with silica gel. 6. Label format (1) Example: TLRE1100B (T11) P/N: TYPE ADDC TOSHIBA TLRE1100B (T11) Q’TY 32C 2,000 pcs 2000 Lot Number Key code for TSB (RANK SYMBOL) Use under 5-30degC/60%RH within 168h [[G]]/RoHS COMPATIBLE *Y3804xxxxxxxxxxxxxxxxx* SEAL DATE: DIFFUSED IN ***** ASSEMBLED IN ***** (2) Label location • Reel • Carton Tape feel direction Label position Label position • The aluminum package in which the reel is supplied also has the label attached to center of one side. 14 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 15 2006-05-31