TLRME50T

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TOSHIBA InGaAℓP LED TLRE50T(F),TLRME50T(F),TLSE50T(F),TLOE50T(F),TLYE50T(F), TLPYE50T(F),TLGE50T(F),TLFGE50T(F),TLPGE50T(F) Panel Circuit Indicators Unit: mm Lead(Pb)-free products (lead: Sn-Ag-Cu) • φ3 mm package • • • • • • • InGaAℓP technology All plastic mold type Transparent lens Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) High intensity light emission Excellent low current light output Applications: message boards, security devices and dashboard displays Lineup Product Name TLRE50T(F) TLRME50T(F) TLSE50T(F) TLOE50T(F) TLYE50T(F) TLPYE50T(F) TLGE50T(F) TLFGE50T(F) TLPGE50T(F) Color Red Red Red Orange Yellow Pure Yellow Green Green Pure Green InGaA lP Material JEDEC JEITA TOSHIBA Weight: 0.14 g ― ― 4-3E1A For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com 1 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) Maximum Ratings (Ta = 25°C) Product Name TLRE50T(F) TLRME50T(F) TLSE50T(F) TLOE50T(F) TLYE50T(F) TLPYE50T(F) TLGE50T(F) TLFGE50T(F) TLPGE50T(F) Forward Current IF (mA) 50 50 50 50 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 120 120 120 120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) −40~100 −40~120 Electrical and Optical Characteristics (Ta = 25°C) Product Name TLRE50T(F) TLRME50T(F) TLSE50T(F) TLOE50T(F) TLYE50T(F) TLPYE50T(F) TLGE50T(F) TLFGE50T(F) TLPGE50T(F) Unit Typ. Emission Wavelength λd 630 626 613 605 587 580 571 565 558 λP (644) (636) (623) (612) (590) (583) (574) (568) (562) nm ∆λ 20 23 20 20 17 14 17 15 14 IF 20 20 20 20 20 20 20 20 20 mA Luminous Intensity IV Min Typ. IF 850 850 1530 1530 1530 850 476 272 153 mcd 1800 2200 3500 4500 3500 2500 1500 1000 600 20 20 20 20 20 20 20 20 20 mA Forward Voltage VF Typ. Max IF 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.1 V 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 20 20 20 20 20 20 20 20 20 mA Reverse Current IR Max VR 50 50 50 50 50 50 50 50 50 4 4 4 4 4 4 4 4 4 V µA Precautions • • • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLRE50T(F) IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity −20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLRME50T(F) IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity −20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLSE50T(F) IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity −20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 560 580 600 620 640 660 680 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLOE50T(F) IF – VF 100 Ta = 25°C 50 30 30000 Ta = 25°C 10000 IV – IF IF (mA) 10 Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current (mcd) 1000 5 3 1 1.6 100 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity −20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLYE50T(F) IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity −20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 7 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLPYE50T(F) IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 (mcd) 1000 100 20 1 Forward current 10 5 3 1 1.6 2.3 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20 0 20 40 60 80 5 3 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 8 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLGE50T(F) IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 Forward current 10 5 3 100 1 1.6 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity −20 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 20 40 60 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 9 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLFGE50T(F) IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 1000 Forward current 10 5 3 100 1 1.6 2.3 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity −20 5 3 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 10 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLPGE50T(F) IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity −20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern 80 IF – Ta Allowable forward current IF (mA) 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 11 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) 12 2005-09-13