VS665N

VS665N Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA IF=20mA Half Intensity Beam Angle θ IFP=20mA Rise Time Tr IFP=20mA Fall Time Tf 1MHz ,V=0V Junction Capacitance Cj IF=10mA Temp. Coefficient of PO P/T Temp. Coefficient of VF IF=10mA V/T RELATIVE POWER vs FORWARD CURRENT 120 RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 -90 MIN 1.5 TYP 3.0 1.8 660 25 ±6 30 30 20 -0.5 -1.5 MAX 2.2 100 UNIT mW V μA nm nm deg. nS nS pF %/℃ mV/℃ FORWARD I-V CHARACTERISTICS RELATIVE POWER OUTPUT(%) RADIATION PATTERN FORWARD CURRENT(mA) ① Anode ･High-output Power ･Narrow Beam Angle ･High Reliability APPLICATIONS ･Color Sensor (Money-bill) ･Paper Sensor (Money-bill) ･Bar-code Reader FEATURES 120 ② Cathode 60 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V) 300 200 100 SPECTRAL OUTPUT 0 0 10 20 30 40 50 60 FORWARD CURRENT(mA) -60 -30 0 30 60 90 BEAM ANGLE(deg.) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) RATINGS ITEM SYMBOL 50 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP Reverse Voltage 5 VR 110 Power Dissipation PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 100 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) 60 RELATIVE POWER OUTPUT(%) 50 40 30 20 10 0 -30 140 POWER OUTPUT vs TEMPERATURE IF=10mA 3 FORWARD VOLTAGE(V) 2.5 2 1.5 1 0.5 0 -30 FORWARD VOLTAGE vs TEMPERATURE IF=10mA 120 100 80 60 40 20 0 -30 0 30 60 90 60 40 20 0 610 660 WAVELENGTH(nm) 710 0 30 60 90 0 30 60 90 AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) OPTRANS To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com 2000/10/24 125-VS665N