VSF614C1

VSF614C1 Visible Light Emitting Diode ･High Luminous Intensity ･Wide Illumination ･Compact APPLICATIONS ･Displays ･Indicators ･Decorations FEATURES ① Anode ② Cathode Dimensions (Unit:mm) SPECTRAL OUTPUT 120 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM SYMBOL RATINGS Forward Current (DC) 50 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 120 PD Topr Operating Temp. -20 TO 80 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 100 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 80 60 40 20 0 560 610 WAVELENGTH(nm) 660 To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com VSF614C1 Visible Light Emitting Diode MIN 0.9 TYP 1.7 300 2.0 610 17 ±30 − − 20 -0.8 -1.7 120 RELATIVE POWER OUTPUT(%) 100 80 60 40 20 0 -90 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) ITEM CONDITIONS SYMBOL Power Output IF=20mA PO Luminous Intensity IF=20mA Iv Forward Voltage IF=20mA VF Reverse Current VR=5V IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA Half Intensity Beam Angle IF=20mA θ Rise Time IFP=20mA Tr Fall Time IFP=20mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of Iv IF=10mA I/T Temp. Coefficient of VF IF=10mA V/T FORWARD I-V CHARACTERISTICS 60 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V) RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) 300 RELATIVE POWER vs FORWARD CURRENT MAX 2.4 100 UNIT mW mcd V μA nm nm deg. nS nS pF %/℃ mV/℃ RADIATION PATTERN 200 100 0 0 10 20 30 40 50 60 FORWARD CURRENT(mA) -60 -30 0 30 60 90 BEAM ANGLE(deg.) THERMAL DERATING CURVE 60 FORWARD CURRENT(mA) 50 40 30 20 10 0 -30 LUMINOUS INTENSITY(%) 140 120 100 80 60 40 20 0 -30 LUMINOUS INTENSITY vs TEMPERATURE IF=10mA FORWARD VOLTAGE vs TEMPERATURE IF=10mA 3 FORWARD VOLTAGE(V) 2.5 2 1.5 1 0.5 0 -30 660 0 30 60 90 0 30 60 90 0 30 60 90 AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃) AMBIENT TEMPERATURE(℃)