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MAX9981EGX-T

MAX9981EGX-T

  • 厂商:

    MAXIM(美信)

  • 封装:

  • 描述:

    MAX9981EGX-T - 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer - Maxim Integrated Products

  • 详情介绍
  • 数据手册
  • 价格&库存
MAX9981EGX-T 数据手册
19-2588; Rev 0; 9/02 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer General Description The MAX9981 dual high-linearity mixer integrates a local oscillator (LO) switch, LO buffer, LO splitter, and two active mixers. On-chip baluns allow for single-ended RF and LO inputs. The active mixers eliminate the need for an additional IF amplifier because the mixer provides a typical overall conversion gain of 2.1dB. The MAX9981 active mixers are optimized to meet the demanding requirements of GSM850, GSM900, and CDMA850 base-station receivers. These mixers provide exceptional linearity with an input IP3 of greater than +27dBm. The integrated LO driver allows for a wide range of LO drive levels from -5dBm to +5dBm. In addition, the built-in high-isolation switch enables rapid LO selection of less than 250ns, as needed for GSM transceiver designs. The MAX9981 is available in a 36-pin QFN package (6mm ✕ 6mm) with an exposed paddle, and is specified over the -40°C to +85°C extended temperature range. Features o +27.3dBm Input IP3 o +13.6dBm Input 1dB Compression Point o 825MHz to 915MHz RF Frequency Range o o o o o o o o 70MHz to 170MHz IF Frequency Range 725MHz to 1085MHz LO Frequency Range 2.1dB Conversion Gain 10.8dB Noise Figure 42dB Channel-to-Channel Isolation -5dBm to +5dBm LO Drive +5V Single-Supply Operation Built-In LO Switch with 52dB LO1 to LO2 Isolation MAX9981 o ESD Protection o Integrated RF and LO Baluns for Single-Ended Inputs Applications GSM850/GSM900 2G and 2.5G EDGE BaseStation Receivers Cellular cdmaOne™ and cdma2000™ BaseStation Receivers TDMA and Integrated Digital Enhanced Network (iDEN)™ Base-Station Receivers Digital and Spread-Spectrum Communication Systems Microwave Point-to-Point Links RFMAIN TAPMAIN MAINBIAS GND GND GND DIVBIAS TAPDIV 1 2 3 4 5 6 7 8 9 Ordering Information PART MAX9981EGX-T TEMP RANGE PIN-PACKAGE -40°C to +85°C 36 QFN-EP* (6mm × 6mm) *EP = Exposed paddle. Pin Configuration/ Functional Diagram IFMAIN+ TOP VIEW VCC GND GND IFMAIN- GND VCC GND 29 31 35 34 36 33 32 30 28 27 LO2 26 GND 25 GND 24 GND 23 LOSEL 22 GND 21 VCC 20 GND 19 LO1 MAX9981 cdmaOne is a trademark of CDMA Development Group. cdma2000 is a trademark of Telecommunications Industry Association. iDEN is a trademark of Motorola, Inc. RFDIV 15 11 12 10 IFDIV+ 13 14 16 17 GND GND GND GND 6mm x 6mm QFN-EP ________________________________________________________________ Maxim Integrated Products IFDIV- GND VCC VCC 18 GND 1 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer MAX9981 ABSOLUTE MAXIMUM RATINGS VCC ........................................................................-0.3V to +5.5V IFMAIN+, IFMAIN-, IFDIV+, IFDIV-, MAINBIAS, DIVBIAS, LOSEL..................-0.3V to (VCC + 0.3V) TAPMAIN, TAPDIV ..............................................................+5.5V MAINBIAS, DIVBIAS Current ................................................5mA RFMAIN, RFDIV, LO1, LO2 Input Power ........................+20dBm Continuous Power Dissipation (TA = +70°C) 36-Pin QFN (derate 33mW/°C above +70°C)..............2200mW Operating Temperature Range ...........................-40°C to +85°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, no RF signals applied, all RF inputs and outputs terminated with 50Ω, 267Ω resistors connected from MAINBIAS and DIVBIAS to GND, TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = +5.0V, TA = +25°C, unless otherwise noted.) PARAMETER Supply Voltage Supply Current Input High Voltage Input Low Voltage LOSEL Input Current SYMBOL VCC ICC VIH VIL ILOSEL -5 CONDITIONS MIN 4.75 260 3.5 0.4 +5 TYP 5.00 291 MAX 5.25 325 UNITS V mA V V µA AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, PLO = -5dBm to +5dBm, fRF = 825MHz to 915MHz, fLO = 725MHz to 1085MHz, TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 870MHz, fLO = 770MHz, TA = +25°C, unless otherwise noted.) (Notes 1, 2) PARAMETER RF Frequency LO Frequency IF Frequency LO Drive Level SYMBOL fRF fLO fIF PLO VCC = +5.0V, fIF = 100MHz, low-side injection, PRF = 0dBm, PLO = -5dBm Cellular band, fRF = 825MHz to 850MHz GSM band, fRF = 880MHz to 915MHz Must meet RF and LO frequency range. IF matching components affect IF frequency range. CONDITIONS MIN 825 725 70 -5 2.7 dB 2.1 ±0.6 53 dB dB TYP MAX 915 1085 170 +5 UNITS MHz MHz MHz dBm Conversion Gain (Note 3) GC Gain Variation from Nominal Conversion Loss from LO to IF fRF = 825MHz to 915MHz, 3σ Inject PIN = -20dBm at fLO + 100MHz into LO port. Measure 100MHz at IF port as POUT. No RF signal at RF port. 100MHz IF, low-side injection Cellular band, fRF = 825MHz to 850MHz GSM band, fRF = 880MHz to 915MHz 10.8 dB 11.9 Noise Figure NF 2 _______________________________________________________________________________________ 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit, VCC = +4.75V to +5.25V, PLO = -5dBm to +5dBm, fRF = 825MHz to 915MHz, fLO = 725MHz to 1085MHz, TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 870MHz, fLO = 770MHz, TA = +25°C, unless otherwise noted.) (Notes 1, 2) PARAMETER Input 1dB Compression Point Input Third-Order Intercept Point 2 RF - 2 LO Spur Rejection 3 RF - 3 LO Spur Rejection Maximum LO Leakage at RF Port Maximum LO Leakage at IF Port Minimum RF to IF Isolation LO1 to LO2 Isolation SYMBOL P1dB IIP3 2×2 3×3 CONDITIONS Low-side injection PLO = -5dBm to +5dBm (Notes 3, 4) fRF = 915MHz, fLO = 815MHz, fSPUR = 865MHz, PRF = -5dBm fRF = 915MHz, fLO = 815MHz, fSPUR = 848.3MHz, PRF = -5dBm PLO = -5dBm to +5dBm, fLO = 725MHz to 1100MHz PLO = -5dBm to +5dBm, fLO = 725MHz to 1100MHz PLO = -5dBm to +5dBm, fRF = 825MHz to 915MHz fRF = 825MHz to 915MHz, PLO1 = PLO2 = +5dBm, fIF = 100MHz (Note 5) PRFMAIN = -5dBm, RFDIV terminated with 50Ω. Measured power at IFDIV relative to IFMAIN. PRFDIV = -5dBm, RFMAIN terminated with 50Ω. Measured power at IFMAIN relative to IFDIV. Main Diversity MIN TYP 13.6 27.3 53.3 43.2 79.7 -42 -30.6 18 52 MAX UNITS dBm dBm dBc dBc dBm dBm dB dB MAX9981 39.5 dBc 42 Minimum Channel Isolation fRF = 825MHz to 915MHz, fLO = 725MHz to 1085MHz LO Switching Time RF Return Loss LO Return Loss IF Return Loss 50% of LOSEL to IF settled within 2° LO port selected LO port unselected RF and LO terminated into 50Ω, fIF = 100MHz (Note 6) 250 25 19 14.3 15 ns dB dB dB Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: Guaranteed by design and characterization. All limits reflect losses of external components. Output measurements taken at IF OUT of Typical Application Circuit. Production tested. Two tones at 1MHz spacing, -5dBm per tone at RF port. Measured at IF port at IF frequency. fLO1 and fLO2 are offset by 1MHz. IF return loss can be optimized by external matching components. _______________________________________________________________________________________ 3 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer MAX9981 Typical Operating Characteristics (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, TA = +25°C, unless otherwise noted.) CONVERSION GAIN vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc01 CONVERSION GAIN vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc02 CONVERSION GAIN vs. RF FREQUENCY LOW-SIDE INJECTION fIF = 100MHz MAIN MIXER MAX9981 toc03 5 TA = -40°C fIF = 100MHz MAIN MIXER 5 fIF = 100MHz MAIN MIXER 5 4 CONVERSION GAIN (dB) 4 CONVERSION GAIN (dB) 4 CONVERSION GAIN (dB) 3 3 3 2 TA = +85°C TA = +25°C 0 820 840 860 880 900 920 RF FREQUENCY (MHz) 2 PLO = -5dBm, 0dBm, +5dBm 1 2 VCC = 4.75V, 5.0V, 5.25V 1 1 0 820 840 860 880 900 920 RF FREQUENCY (MHz) 0 820 840 860 880 900 920 RF FREQUENCY (MHz) CONVERSION GAIN vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc04 CONVERSION GAIN vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc05 CONVERSION GAIN vs. RF FREQUENCY HIGH-SIDE INJECTION fIF = 120MHz MAIN MIXER MAX9981 toc06 5 fIF = 120MHz MAIN MIXER TA = -40°C 5 fIF = 120MHz MAIN MIXER 5 4 CONVERSION GAIN (dB) 4 CONVERSION GAIN (dB) 4 CONVERSION GAIN (dB) 3 3 3 2 2 PLO = -5dBm, 0dBm, +5dBm 1 2 VCC = 4.75V, 5.0V, 5.25V 1 1 TA = +85°C TA = +25°C 0 0 820 840 860 880 900 920 820 840 860 880 900 920 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 880 900 920 0 820 840 860 RF FREQUENCY (MHz) 2 RF - 2 LO RESPONSE vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc07 2 RF - 2 LO RESPONSE vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc08 2 RF - 2 LO RESPONSE vs. RF FREQUENCY LOW-SIDE INJECTION fIF = 100MHz MAIN MIXER PRF = -5dBm MAX9981 toc09 80 TA = +85°C 75 2 RF - 2 LO RESPONSE (dBc) 70 65 60 55 50 45 820 840 860 880 900 TA = -40°C TA = +25°C fIF = 100MHz MAIN MIXER PRF = -5dBm 85 2 RF - 2 LO RESPONSE (dBc) 75 2 RF - 2 LO RESPONSE (dBc) fIF = 100MHz MAIN MIXER PRF = -5dBm 80 75 70 65 60 55 50 45 VCC = 4.75V, 5.0V, 5.25V PLO = -5dBm 65 PLO = 0dBm 55 PLO = +5dBm 45 920 820 840 860 880 900 920 820 840 860 880 900 920 RF FREQUENCY (MHz) RF FREQUENCY (MHz) RF FREQUENCY (MHz) 4 _______________________________________________________________________________________ 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, TA = +25°C, unless otherwise noted.) MAX9981 2 RF - 2 LO RESPONSE vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc10 2 RF - 2 LO RESPONSE vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc11 2 RF - 2 LO RESPONSE vs. RF FREQUENCY LOW-SIDE INJECTION fIF = 100MHz DIVERSITY MIXER PRF = -5dBm 55 MAX9981 toc12 MAX9981 toc18 MAX9981 toc15 60 TA = +85°C 2 RF - 2 LO RESPONSE (dBc) 55 fIF = 100MHz DIVERSITY MIXER PRF = -5dBm 60 PLO = +5dBm 2 RF - 2 LO RESPONSE (dBc) 55 fIF = 100MHz DIVERSITY MIXER PRF = -5dBm 60 50 50 2 RF - 2 LO RESPONSE (dBc) 50 45 TA = +25°C TA = -40°C 45 PLO = 0dBm PLO = -5dBm 45 VCC = 4.75V, 5.0V, 5.25V 40 820 840 860 880 900 920 RF FREQUENCY (MHz) 40 820 840 860 880 900 920 RF FREQUENCY (MHz) 40 820 840 860 880 900 920 RF FREQUENCY (MHz) 2 LO - 2 RF RESPONSE vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc13 2 LO - 2 RF RESPONSE vs. RF FREQUENCY HIGH-SIDE INJECTION fIF = 120MHz MAIN MIXER PRF = -5dBm MAX9981 toc14 2 LO - 2 RF RESPONSE vs. RF FREQUENCY HIGH-SIDE INJECTION 60 fIF = 120MHz MAIN MIXER PRF = -5dBm 70 fIF = 120MHz MAIN MIXER PRF = -5dBm 60 2 LO - 2 RF RESPONSE (dBc) 2 LO - 2 RF RESPONSE (dBc) 60 TA = +85°C 56 PLO = -5dBm 54 PLO = 0dBm 2 LO - 2 RF RESPONSE (dBc) 65 58 58 56 VCC = 5.25V 55 TA = +25°C 50 TA = -40°C 45 820 840 860 880 900 920 RF FREQUENCY (MHz) 54 VCC = 4.75, 5.0V 52 PLO = +5dBm 50 820 840 860 880 900 920 RF FREQUENCY (MHz) 52 50 820 840 860 880 900 920 RF FREQUENCY (MHz) 2 LO - 2 RF RESPONSE vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc16 2 LO - 2 RF RESPONSE vs. RF FREQUENCY HIGH-SIDE INJECTION fIF = 120MHz DIVERSITY MIXER PRF = -5dBm PLO = +5dBm 47.5 45.0 42.5 40.0 PLO = -5dBm 37.5 42 820 840 860 880 900 920 MAX9981 toc17 2 LO - 2 RF RESPONSE vs. RF FREQUENCY HIGH-SIDE INJECTION 46 fIF = 120MHz DIVERSITY MIXER PRF = -5dBm 47 46 2 LO - 2 RF RESPONSE (dBc) 45 44 TA = +25°C 43 42 TA = -40°C 41 40 820 840 860 TA = +85°C 2 LO - 2 RF RESPONSE (dBc) 2 LO - 2 RF RESPONSE (dBc) fIF = 120MHz DIVERSITY MIXER PRF = -5dBm 52.5 50.0 PLO = 0dBm 45 44 VCC = 5.25V 43 VCC = 4.75V, 5.0V 880 900 920 820 840 860 880 900 920 RF FREQUENCY (MHz) RF FREQUENCY (MHz) RF FREQUENCY (MHz) _______________________________________________________________________________________ 5 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer MAX9981 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, TA = +25°C, unless otherwise noted.) INPUT IP3 vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc19 INPUT IP3 vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc20 INPUT IP3 vs. RF FREQUENCY LOW-SIDE INJECTION fIF = 100MHz MAIN MIXER VCC = 5.25V INPUT IP3 (dBm) 28 MAX9981 toc21 MAX9981 toc27 MAX9981 toc24 30 fIF = 100MHz MAIN MIXER TA = +85°C 30 fIF = 100MHz MAIN MIXER PLO = +5dBm 30 29 INPUT IP3 (dBm) 29 INPUT IP3 (dBm) 29 28 28 27 TA = +25°C TA = -40°C 25 820 840 860 880 900 920 RF FREQUENCY (MHz) 27 PLO = 0dBm 26 PLO = -5dBm 27 VCC = 5.0V 26 VCC = 4.75V 26 25 820 840 860 880 900 920 RF FREQUENCY (MHz) 25 820 840 860 880 900 920 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc22 INPUT IP3 vs. RF FREQUENCY HIGH-SIDE INJECTION fIF = 120MHz MAIN MIXER PLO = -5dBm INPUT IP3 (dBm) MAX9981 toc23 INPUT IP3 vs. RF FREQUENCY HIGH-SIDE INJECTION 30 VCC = 5.25V VCC = 5.0V 28 fIF = 120MHz MAIN MIXER 30 fIF = 120MHz MAIN MIXER TA = -40°C 30 29 INPUT IP3 (dBm) 29 29 INPUT IP3 (dBm) 28 28 27 TA = +25°C 26 TA = +85°C 25 820 840 860 880 900 920 RF FREQUENCY (MHz) 27 PLO = 0dBm 26 PLO = +5dBm 25 820 840 860 880 900 920 RF FREQUENCY (MHz) 27 26 VCC = 4.75V 25 820 840 860 880 900 920 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc25 INPUT P1dB vs. RF FREQUENCY LOW-SIDE INJECTION fIF = 100MHz MAIN MIXER MAX9981 toc26 INPUT P1dB vs. RF FREQUENCY LOW-SIDE INJECTION 17 fIF = 100MHz MAIN MIXER 17 fIF = 100MHz MAIN MIXER 17 16 INPUT P1dB (dBm) 16 INPUT P1dB (dBm) 16 INPUT P1dB (dBm) 15 TA = +25°C 14 TA = +85°C 15 PLO = -5dBm PLO = 0dBm 15 VCC = 5.25V 14 VCC = 5.0V 14 13 TA = -40°C 12 820 840 860 880 900 920 RF FREQUENCY (MHz) 13 PLO = +5dBm 12 820 840 860 880 900 920 RF FREQUENCY (MHz) 13 VCC = 4.75V 12 820 840 860 880 900 920 RF FREQUENCY (MHz) 6 _______________________________________________________________________________________ 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, TA = +25°C, unless otherwise noted.) MAX9981 INPUT P1dB vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc28 INPUT P1dB vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc29 INPUT P1dB vs. RF FREQUENCY HIGH-SIDE INJECTION fIF = 120MHz MAIN MIXER VCC = 5.25V INPUT P1dB (dBm) 15 VCC = 5.0V MAX9981 toc30 MAX9981 toc36 MAX9981 toc33 17 TA = +85°C TA = +25°C 15 fIF = 120MHz MAIN MIXER 17 fIF = 120MHz MAIN MIXER PLO = -5dBm 17 16 INPUT P1dB (dBm) 16 INPUT P1dB (dBm) 16 15 14 14 PLO = 0dBm 13 PLO = +5dBm 14 VCC = 4.75V 13 TA = -40°C 12 820 840 860 880 900 920 RF FREQUENCY (MHz) 13 12 820 840 860 880 900 920 RF FREQUENCY (MHz) 12 820 840 860 880 900 920 RF FREQUENCY (MHz) CHANNEL ISOLATION vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc31 CHANNEL ISOLATION vs. RF FREQUENCY LOW-SIDE INJECTION RF MAIN IN/IF DIVERSITY OUT fIF = 100MHz MAX9981 toc32 CHANNEL ISOLATION vs. RF FREQUENCY LOW-SIDE INJECTION 55 RF DIVERSITY IN/IF MAIN OUT fIF = 100MHz 55 RF MAIN IN/IF DIVERSITY OUT fIF = 100MHz TA = +85°C 55 CHANNEL ISOLATION (dBc) CHANNEL ISOLATION (dBc) 50 50 CHANNEL ISOLATION (dBc) 50 45 45 45 40 TA = +25°C TA = -40°C 40 PLO = -5dBm, 0dBm, +5dBm 35 40 PLO = -5dBm, 0dBm, +5dBm 35 820 840 860 880 900 920 RF FREQUENCY (MHz) 35 820 840 860 880 900 920 820 840 860 880 900 920 RF FREQUENCY (MHz) RF FREQUENCY (MHz) CHANNEL ISOLATION vs. RF FREQUENCY HIGH-SIDE INJECTION MAX9981 toc34 CHANNEL ISOLATION vs. RF FREQUENCY HIGH-SIDE INJECTION RF MAIN IN/IF DIVERSITY OUT fIF = 120MHz MAX9981 toc35 CHANNEL ISOLATION vs. RF FREQUENCY HIGH-SIDE INJECTION 55 RF DIVERSITY IN/IF MAIN OUT fIF = 120MHz 55 RF MAIN IN/IF DIVERSITY OUT fIF = 120MHz TA = +85°C 55 CHANNEL ISOLATION (dBc) CHANNEL ISOLATION (dBc) 50 50 CHANNEL ISOLATION (dBc) 50 45 TA = +25°C 40 TA = -40°C 35 820 840 860 880 900 920 RF FREQUENCY (MHz) 45 45 40 PLO = -5dBm, 0dBm, +5dBm 35 820 840 860 880 900 920 RF FREQUENCY (MHz) 40 PLO = -5dBm, 0dBm, +5dBm 35 820 840 860 880 900 920 RF FREQUENCY (MHz) _______________________________________________________________________________________ 7 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer MAX9981 Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, TA = +25°C, unless otherwise noted.) LO SWITCH ISOLATION vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc37 LO SWITCH ISOLATION vs. RF FREQUENCY LOW-SIDE INJECTION MAX9981 toc38 LO SWITCH ISOLATION vs. RF FREQUENCY HIGH-SIDE INJECTION LO OFFSET 1MHz fIF = 120MHz MAIN MIXER MAX9981 toc39 56 LO OFFSET 1MHz fIF = 100MHz DIVERSITY MIXER 56 LO OFFSET 1MHz fIF = 100MHz DIVERSITY MIXER PLO = -5dBm 56 LO SWITCH ISOLATION (dBc) LO SWITCH ISOLATION (dBc) LO SWITCH ISOLATION (dBc) 55 TA = +85°C 55 55 54 54 54 TA = +85°C 53 TA = +25°C TA = +-40°C 53 PLO = 0dBm PLO = +5dBm 53 52 52 52 TA = +25°C 51 880 900 920 820 840 860 880 TA = -40°C 900 920 51 820 840 860 880 900 920 RF FREQUENCY (MHz) 51 820 840 860 RF FREQUENCY (MHz) RF FREQUENCY (MHz) LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX9981 toc40 LO LEAKAGE AT IF PORT vs. LO FREQUENCY MAX9981 toc41 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAIN MIXER -45 LO LEAKAGE (dBm) -50 -55 -60 -65 -70 PLO = 0dBm PLO = +5dBm PLO = -5dBm MAX9981 toc42 -30 MAIN MIXER -33 LO LEAKAGE (dBm) TA = +85°C -27 MAIN MIXER -30 LO LEAKAGE (dBm) PLO = 0dBm PLO = +5dBm -40 -36 TA = +25°C -33 -39 TA = -40°C -42 -36 -39 PLO = -5dBm -45 750 800 850 900 950 1000 LO FREQUENCY (MHz) -42 750 800 850 900 950 1000 LO FREQUENCY (MHz) 700 800 900 1000 1100 LO FREQUENCY (MHz) RF TO IF ISOLATION vs. RF FREQUENCY MAX9981 toc43 RF TO IF ISOLATION vs. RF FREQUENCY MAX9981 toc44 NOISE FIGURE vs. RF FREQUENCY LOW-SIDE INJECTION 14 NOISE FIGURE (dB) 13 12 11 10 TA = +25°C TA = -40°C 820 840 860 880 900 920 TA = +85°C fIF = 100MHz MAIN MIXER MAX9981 toc45 30 MAIN MIXER 27 RF TO IF ISOLATION (dB) TA = +85°C TA = +25°C 26 MAIN MIXER 15 RF TO IF ISOLATION (dB) 24 PLO = 0dBm, +5dBm 22 24 21 18 TA = -40°C 20 PLO = -5dBm 9 8 15 820 840 860 880 900 920 RF FREQUENCY (MHz) 18 820 840 860 880 900 920 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 8 _______________________________________________________________________________________ 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, TA = +25°C, unless otherwise noted.) MAX9981 RF RETURN LOSS vs. RF FREQUENCY MAX9981 toc46 IF RETURN LOSS vs. IF FREQUENCY MAIN MIXER SET BY EXTERNAL MATCHING MAX9981 toc47 LO RETURN LOSS vs. LO FREQUENCY LO INPUT SELECTED 5 LO RETURN LOSS (dB) 10 15 20 25 PLO = 0dBm 30 PLO = +5dBm PLO = -5dBm MAX9981 toc48 0 5 RF RETURN LOSS (dB) 10 15 20 25 30 35 MAIN MIXER 0 0 IF RETURN LOSS (dB) PLO = -5dBm, 0dBm, +5dBm 5 10 15 20 700 800 900 1000 1100 50 75 100 125 150 175 200 RF FREQUENCY (MHz) IF FREQUENCY (MHz) 35 700 800 900 1000 1100 LO FREQUENCY (MHz) LO RETURN LOSS vs. LO FREQUENCY MAX9981 toc49 SUPPLY CURRENT vs. TEMPERATURE MAX9981 toc50 0 LO INPUT UNSELECTED 5 LO RETURN LOSS (dB) 10 15 20 25 30 35 700 800 900 1000 PLO = -5dBm, 0dBm, +5dBm 320 310 SUPPLY CURRENT (mA) 300 VCC = 5.0V 290 280 270 260 VCC = 4.75V VCC = 5.25V 1100 -40 -15 10 35 60 85 LO FREQUENCY (MHz) TEMPERATURE (°C) _______________________________________________________________________________________ 9 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer MAX9981 Pin Description PIN 1 2 3 4, 5, 6, 11, 12, 15, 17, 18, 20, 22, 24, 25, 26, 28, 29, 31, 34, 35, EP 7 8 9 10, 16, 21, 30, 36 13, 14 19 23 27 32, 33 NAME RFMAIN TAPMAIN MAINBIAS FUNCTION Main Channel RF Input. This input is internally matched to 50Ω and is DC shorted to ground through a balun. Main RF Balun Center Tap. Connect bypass capacitors from this pin to ground. Bias control for the Main Mixer. Connect a 267Ω resistor from this pin to ground to set the bias current for the main mixer. GND Ground DIVBIAS TAPDIV RFDIV VCC IFDIV+, IFDIVLO1 LOSEL LO2 IFMAIN-, IFMAIN+ Bias Control for the Diversity Mixer. Connect a 267Ω resistor from this pin to ground to set the bias current for the diversity mixer. Diversity RF Balun Center Tap. Connect bypass capacitors from this pin to ground. Diversity Channel RF Input. This input is internally matched to 50Ω and is DC shorted to ground through a balun. Power-Supply Connections. Connect bypass capacitors as shown in the Typical Application Circuit. Differential IF Output for Diversity Mixer. Connect 560nH pullup inductors and 137Ω pullup resistors from each of these pins to VCC for a 70MHz to 100MHz IF range. Local Oscillator Input 1. This input is internally matched to 50Ω and is DC shorted to ground through a balun. Local Oscillator Select. Set this pin to logic HIGH to select LO1; set to logic LOW to select LO2. Local Oscillator Input 2. This input is internally matched to 50Ω and is DC shorted to ground through a balun. Differential IF Output for the Main Mixer. Connect 560nH pullup inductors and 137Ω pullup resistors from each of these pins to VCC for a 70MHz to 100MHz IF range. 10 ______________________________________________________________________________________ 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer Typical Application Circuit C14 MAX9981 L1 5.0V R3 3 2 T1 6 IFMAIN_OUT C13 L2 R4 C16 1 4:1 (200:50) TRANSFORMER 4 C15 5.0V C5 5.0V C10 IFMAIN+ IFMAIN- GND GND GND GND 29 VCC 36 35 34 33 32 31 30 C1 RF_MAIN 28 GND VCC RFMAIN TAPMAIN C8 1 2 3 4 5 6 7 8 9 27 LO2 GND GND GND LOSEL GND 5.0V VCC GND LO1 C7 LO1 LO SELECT LO2 MAX9981 26 25 24 23 22 21 20 19 C11 C2 MAINBIAS GND GND R1 R2 GND DIVBIAS C12 C3 TAPDIV RFDIV RF_DIV C4 10 11 12 13 14 15 16 17 GND IFDIV+ GND GND GND VCC IFDIV- VCC 5.0V C6 GND 18 5.0V C9 C19 L4 5.0V R6 3 2 T2 6 IFDIV_OUT C17 L3 R5 4:1 (200:50) TRANSFORMER 4 C20 1 C18 ______________________________________________________________________________________ 11 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer MAX9981 Component List COMPONENT C1, C4 C2, C3 C5, C6, C9, C10 C7, C8 C11, C12 C13, C16, C17, C20 C14, C15, C18, C19 L1–L4 R1, R2 R3–R6 T1, T2 VALUE 33pF 3.9pF 100pF 15pF 0.033µF 220pF 330pF 560nH 267Ω ±1% 137Ω ±1% 4:1 (200:50) SIZE 0603 0603 0603 0603 0603 0603 0603 1008 0603 0603 — PART NUMBER Murata GRM1885C1H330J Murata GRM1885C1H3R9C Murata GRM1885C1H101J Murata GRM1885C1H150J Murata GRM188R71E333K Murata GRM1885C1H221J Murata GRM1885C1H331J CoilCraft 1008CS-561XJBB — — Mini-Circuits TC4-1W-7A Detailed Description The MAX9981 downconverter mixers are designed for GSM and CDMA base-station receivers with an RF frequency between 825MHz and 915MHz. Each active mixer provides 2.1dB to 2.7dB of overall conversion gain to the receive signal, removing the need for an external IF amplifier. The mixers have excellent input IP3 measuring greater than +27dBm. The device also features integrated RF and LO baluns that allow the mixers to be driven with single-ended signals. IF Outputs Each mixer has an IF frequency range of 70MHz to 170MHz. The differential IF output ports require external pullup inductors to VCC to resonate out the differential on-chip capacitance of 1.8pF. See the T ypical Application Circuit for recommended component values for an IF of 70MHz to 100MHz. The IF match can be optimized for higher IF frequencies by reducing the values of the pullup inductors L1, L2, L3, and L4. Note: Removing the ground plane from underneath these inductors reduces parasitic capacitive loading and improves VSWR. RF Inputs The MAX9981 has two RF inputs (RFMAIN, RFDIV) that are internally matched to 50Ω requiring no external matching components. A 33pF DC-blocking capacitor is required at the input since the input is internally DC shorted to ground through a balun. Return loss is better than 15dB over the entire frequency range of 825MHz to 915MHz. Bias Circuitry Connect bias resistors from MAINBIAS and DIVBIAS to ground to set the mixer bias current. A nominal resistor value of 267Ω sets an input IP3 of +27dBm and supply current of 290mA. Bias currents are fine-tuned at the factory and should not be adjusted. LO Inputs The mixers can be used for either high-side or low-side injection applications with an LO frequency range of 725MHz to 1085MHz. An internal LO switch allows for switching between two single-ended LO ports. This is useful for fast frequency changes/frequency hopping. LO switching time is less than 250ns. The switch is controlled by a digital input (LOSEL) that when high, selects LO1 and when low, selects LO2. The selected LO input mixes with both RFMAIN and RFDIV to produce the IF signals. Internal LO buffers allow for a wide power range on the LO ports. The LO signal power can vary from -5dBm to +5dBm. LO1 and LO2 are internally matched to 50Ω, so only a 15pF DC-blocking capacitor is required at each LO port. 12 Applications Information Layout Considerations A properly designed PC board is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. For best performance, route the ground pin traces directly to the exposed paddle underneath the package. This paddle should be connected to the ground plane of the board by using multiple vias under the device to provide the best RF/thermal conduction path. Solder the exposed paddle, on the bottom of the device package, to a PC board exposed pad. ______________________________________________________________________________________ 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer Power Supply Bypassing Proper voltage supply bypassing is essential for high-frequency circuit stability. Bypass each VCC pin, TAPMAIN, and TAPDIV with the capacitors shown in the typical application circuit. Place the TAPMAIN and TAPDIV bypass capacitors to ground within 100mils of the TAPMAIN and TAPDIV pins. TRANSISTOR COUNT: 358 PROCESS: BiCMOS Chip Information MAX9981 ______________________________________________________________________________________ 13 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer MAX9981 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) 36L,40L, QFN.EPS 14 ______________________________________________________________________________________ 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) MAX9981 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 15 © 2002 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
MAX9981EGX-T
物料型号: - MAX9981EGX-T,工作温度范围为-40°C至+85°C,36 QFN-EP(6mm x 6mm)封装。

器件简介: - MAX9981是一款双高线性混频器,集成了本振(LO)开关、LO缓冲器、LO分配器和两个主动混频器。片内平衡-不平衡转换器(balun)允许单端RF和LO输入。该混频器提供典型的总转换增益为2.1dB,优化用于满足GSM850、GSM900和CDMA850基站接收机的要求,提供卓越的线性性能,输入IP3大于+27dBm。集成的LO驱动器允许广泛的LO驱动电平从-5dBm到+5dBm。此外,内置的高隔离度开关实现了少于250ns的快速LO选择,适用于GSM收发器设计。

引脚分配: - 1号引脚:RFMAIN,主通道RF输入。 - 2号引脚:TAPMAIN,主RF平衡-不平衡转换器中心抽头。 - 3号引脚:MAINBIAS,主混频器的偏置控制。 - 4-6, 11, 12, 15, 17, 18, 20, 22, 24, 25, 26, 28, 29, 31, 34, 35和EP引脚:GND,接地。 - 7号引脚:DIVBIAS,分集混频器的偏置控制。 - 8号引脚:TAPDIV,分集RF平衡-不平衡转换器中心抽头。 - 9号引脚:RFDIV,分集通道RF输入。 - 10, 16, 21, 30, 36引脚:Vcc,电源连接。 - 13, 14引脚:IFDIV+, IFDIV-,分集混频器的差分IF输出。 - 19号引脚:LO1,本振输入1。 - 23号引脚:LOSEL,本振选择。 - 27号引脚:LO2,本振输入2。 - 32, 33引脚:IFMAIN-, IFMAIN+,主混频器的差分IF输出。

参数特性: - 工作电压:4.75V至5.25V。 - 工作电流:260μA至325μA。 - 输入高电平电压:3.5V。 - 输入低电平电压:0.4V。 - LOSEL输入电流:-5A至+5A。

功能详解: - MAX9981混频器为GSM和CDMA基站接收机设计,RF频率范围在825MHz至915MHz之间。每个主动混频器为接收信号提供2.1dB至2.7dB的总转换增益,无需外部IF放大器。混频器具有出色的输入IP3,测量值大于+27dBm。该设备还具有集成的RF和LO平衡-不平衡转换器,允许混频器使用单端信号进行驱动。

应用信息: - 适用于GSM850/GSM900 2G和2.5G EDGE基站接收机、Cellular cdmaOne™和cdma2000™基站接收机、TDMA和Integrated Digital Enhanced Network (iDEN)™基站接收机、数字和扩频通信系统、微波点对点链路。
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