79C0832

79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM Memory FEATURES: • • • • 256k x 32-bit EEPROM MCM RAD-PAK® radiation-hardened against natural space radiation Total dose hardness: - >100 krad (Si) - Dependent upon orbit Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode High endurance - 10,000 cycles/byte (Page Programming Mode) - 10 year data retention Page Write Mode: 1 to 8 X 128 byte page High Speed: - 150 and 200 ns maximum access times Automatic programming - 10 ms automatic Page/Byte write Low power dissipation - 160 mW/MHz active current - 880 µ W standby current DESCRIPTION: Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79C0832 is capable of in-system electrical byte and page programmability. It has a 128 x 8 byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0832, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K. • • • • • • 02.14.06 REV 15 All data sheets are subject to change without notice 1 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com ©2006 Maxwell Technologies All rights reserved. 8 Megabit (256K x 32-Bit) EEPROM MCM 79C0832 Memory TABLE 1. 79C0832 PINOUT DESCRIPTION PIN 84-77, 29-37 48-55, 66-73, 96, 1-7, 18-25 61 41, 43 45 10, 17, 28, 40, 44, 58, 65, 76, 87, 93 8, 9, 11-16, 26, 27, 38, 42, 46, 56, 57, 59, 60, 62-64, 74, 75, 85, 86, 88-92, 94, 95 39 47 SYMBOL ADDR0 to ADDR16 I/O0 to I/O31 OE CE0-1 WE 5V GND DESCRIPTION Address Input Data Input/Output Output Enable Chip Enable 0 through 1 Write Enable Power Supply Ground RDY/BUSY RES Ready/Busy Reset 02.14.06 REV 15 All data sheets are subject to change without notice 2 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 2. 79C0832 ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Input Voltage Package Weight SYMBOL VCC VIN RP RT XP Thermal Impedance Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width VOL VOH --VOL VOH Program Reset X X 1. Refer to the recommended DC operating conditions. 2. For CE0-1 only one CE can be used (“on”) at a time. 02.14.06 REV 15 All data sheets are subject to change without notice 7 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM FIGURE 1. READ TIMING WAVEFORM 79C0832 Memory FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 02.14.06 REV 15 All data sheets are subject to change without notice 8 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) 79C0832 Memory FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation. 02.14.06 REV 15 All data sheets are subject to change without notice 9 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) 1 79C0832 Memory 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation. FIGURE 6. DATA POLLING TIMING WAVEFORM 02.14.06 REV 15 All data sheets are subject to change without notice 10 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 79C0832 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE) Memory EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data integrity. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading the first byte of data, the data load window opens 30µ s for the second byte. In the same manner each additional byte of data can be loaded within 30µ s of the preceding falling edge of either WE or CE. When CE and WE are kept high for 100µ s after data input, the EEPROM enters the write mode automatically and the data input is written into the EEPROM. WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. 02.14.06 REV 15 All data sheets are subject to change without notice 11 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM Data Polling 79C0832 Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( VOH). RES Signal When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations. Memory Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control pins. 02.14.06 REV 15 All data sheets are subject to change without notice 12 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 2. Data Protection at VCC on/off 79C0832 When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. 3. RES Signal RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data is input . Memory 10ms 4. Software Data Protection Enable The 79C0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to the device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the EEPROM and allowing the write cycle period (tWC) of 10ms to elapse: . Software Data Protection Enable Sequence Address 5555 AAAA or 2AAA 5555 Data AA AA AA AA 55 55 55 55 A0 A0 A0 A0 02.14.06 REV 15 All data sheets are subject to change without notice 13 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 5. Writing to the Memory with Software Data Protection Enabled 79C0832 To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This sequence allows the write to occur while at the same time keeping the software protection enabled Sequence for Writing Data with Software Protection Enabled. Address 5555 AAAA or 2AAA 5555 Write Address(s) Data AA AA AA AA 55 55 55 55 A0 A0 A0 A0 Normal Data Input Memory 6. Disabling Software Protection Software data protection mode can be disabled by inputting the following 6 bytes sequence. Once the software protection sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed. Software Protection Disable Sequence Address 5555 AAAA or 2AAA 5555 5555 AAAA or 2AAA 5555 Data AA AA AA AA 55 55 55 55 80 80 80 80 AA AA AA AA 55 55 55 55 20 20 20 20 Devices are shipped in the “unprotected” state, meaning that the contents of the memory can be changed as required by the user. After the software data protection is enabled, the device enters the Protect Mode where no further write commands have any effect on the memory contents. 02.14.06 REV 15 All data sheets are subject to change without notice 14 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 79C0832 Memory 96-PIN RAD-PAK® QUAD FLAT PACKAGE SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N --2.485 --.152 .184 .010 --1.408 DIMENSION NOM .200 .012 .009 1.420 1.162 .050 .129 2.528 2.500 1.700 .165 96 .178 2.543 2.505 MAX .216 .013 .012 1.432 Note: All dimensions in inches 02.14.06 REV 15 All data sheets are subject to change without notice 15 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM A1 79C0832 c Pin #1 ID S1 MAXWELL TECHNOLOGIES e L2 b D1 D(sq) L1(sq) L(sq) Memory A 96 PIN RAD-TOLERANT QUAD FLAT PACKAGE SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N .152 -2.485 .167 .010 -1.408 DIMENSION NOM .183 .012 .009 1.420 1.162 .050 .129 2.528 2.500 1.700 .165 96 .178 2.543 2.505 MAX .199 .013 .012 1.432 Note: All dimensions in inches 02.14.06 REV 15 All data sheets are subject to change without notice 16 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 79C0832 Memory 96 PIN XRAY QUAD FLAT PACKAGE SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N 3.000 2.985 2.090 .115 .200 .007 .009 1.690 DIMENSION NOM .222 .010 .009 1.707 1.150 0.050 .278 3.020 3.000 2.200 .130 96 3.040 3.005 2.210 .145 MAX .245 .013 .013 1.725 Note: All dimensions in inches 02.14.06 REV 15 All data sheets are subject to change without notice 17 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM Important Notice: 79C0832 These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 02.14.06 REV 15 All data sheets are subject to change without notice 18 ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM Product Ordering Options 79C0832 Model Number 79C0832 XX Q X -XX Feature Access Time Option Details 15 = 150 ns 20 = 200 ns Screening Flow Multi Chip Module (MCM)1 K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Memory Package Q = Quad Flat Pack Radiation Feature RP = RAD-PAK® package XP = Xray-Pak Package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at Base Product Nomenclature 8 Megabit (256K x 32-Bit) EEPROM MCM 1) Products are manufactureded and screened to Maxwell Technologies self-defined Class H and Class K flows. 02.14.06 REV 15 All data sheets are subject to change without notice 19 ©2006 Maxwell Technologies All rights reserved