1N753

MCC Features • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 1N746 THRU 1N759 Zener Voltage 3.3V to 12V Silicon Planar Power Zener Diodes Standards zener voltage tolerance is ±10% , Add suffix “A” for ±5% tolerance, other tolerances are available upon request 0.5W Silicon Planar Zener Diodes • • • Mechanical Data Case: DO-35 glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram DO-35 Maximum Ratings Symbol Zener Current Power Dissipation @ T A=50oC Junction Temperature Storage Temperature Range Ptot TJ TSTG Value See Table 1 500 175 -65 to 175 Units mW o o D C C A Cathode Mark B D Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Thermal resistance Forward Voltage @ IF=200mA RqJA Maximum 300 1.5 o Unit C/W V C VF NOTE: 1) Valid provided that a distance of 8mm from case are kept at ambient temperature 2) Power derating: 4.0mW/oC above 50oC DIM A B C D DIMENSIONS INCHES MIN ------1.000 MM MIN ------25.40 MAX .166 .079 .020 --- MAX 4.2 2.00 .52 --- NOTE www.mccsemi.com 1N746 thru 1N759 MCC MCC PART NUMBER 1N746 1N747 1N748 1N749 1N750 1N751 1N752 1N753 1N754 1N755 1N756 1N757 1N758 1N759 NORMAL ZENER VOLTAGE Vz@ Izt VOLTS 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 12 MAXIMUM MAXIMUM ZENER ZENER MAXIMUM REVERSE TEST CURRENT IMPEDANCE LEAKAGE CURRENT CURRENT TYPICAL TEMP. IZM Zzt @ Izt Ir @ Vr=1V Izt COEFFICIENT mA OHMS uA @25oC uA @125oC mA %/ oC 20 28 10 30 110 -.066 20 24 10 30 100 -.058 20 23 10 30 95 -.046 20 22 2 30 85 -.033 20 19 2 30 75 -.015 20 17 1 20 70 ±.010 20 11 1 20 65 +.030 20 7.0 0.1 20 60 +.049 20 5.0 0.1 20 55 +.053 20 6.0 0.1 20 50 +.057 20 8.0 0.1 20 45 +.060 20 10 0.1 20 40 +.061 20 17 0.1 20 35 +.062 20 30 0.1 20 30 +.062 Note: 1) Tested with pulses t p= 20ms 2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. 3) Zener impedance derived by superimposing on IZT, a 60 cps, rms ac current equal to 10% IZT (2 mA ac) 4) Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches thermal equilibrium at the power dissipation of 400mW. www.mccsemi.com