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1N914B

1N914B

  • 厂商:

    MCC(美微科)

  • 封装:

  • 描述:

    1N914B - 500mW 100 Volt Silicon Epitaxial Diodes - Micro Commercial Components

  • 数据手册
  • 价格&库存
1N914B 数据手册
MCC )HDWXUHV • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 1N914(A)(B)  Low Current Leakage Compression Bond Construction Low Cost 500mW 100 Volt Silicon Epitaxial Diodes DO-35 O 0D[LPXP5DWLQJV • • • Operating Temperature: -55 C to +150 C Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/W Junction To Ambient O Electrical Characteristics @ 25OC Unless Otherwise Specified Maximum Repetitive Reverse Voltage Average Rectified Forward Current Power Dissipation Junction Temperature Peak Forward Surge Current VRRM IO PD TJ IFSM 100V 2 00mA 500mW 150OC 1.0A 4.0A 100V 75V A D Minimum Breakdown Voltage Maximum Instantaneous Forward Voltage 1N914 1N914 A 1N914 B 1N914 B Maximum Reverse Current Typical Junction Capacitance Reverse Recovery Time VR Pulse Width=1.0 second Pulse Width=1.0 microsecond IR=100uA, IR=5.0uA O TJ = 25 C IFM = 10mA; IFM = 20mA; IFM = 100mA; IFM = 5 .0mA; VR=20V, TJ=25OC, O VR=75V, TJ=25 C, VR=20V, TJ=150 OC Measured at 1.0MHz, VR=0V IF=10mA VR = 6V RL=100 Ù, Irr=1.0mA Cathode Mark B D C VF 1 .0V IR CJ Trr 720mV 25nA 5.0uA 50uA 4.0pF 4.0nS DIMENSIONS INCHES MIN ------1.000 MM MIN ------25.40 DIM A B C D MAX .166 .079 .020 --- MAX 4.2 2.00 .52 --- NOTE *Pulse test: Pulse width 300 usec, Duty cycle 2% www.mccsemi.com 1N914(A)(B) Figure 1 Typical Forward Characteristics 20 1N914B 1N914A 10 6 1N914 4 2 MilliAmps 1 .6 .4 .2 25OC .1 .06 .04 .02 .01 .4 .6 .8 1.0 1.2 1.4 0 100 400 300 MilliWatts 200 500 600 MCC Figure 2 Forward De rating Curve Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 O 125 150 175 C Admissable Power Dissipation - MilliWatts versus Ambient Temperature - OC Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 10 6 4 2 pF 1 .6 .4 .2 .1 .1 .2 .4 1 2 4 Volts Junction Capacitance - pF versus Reverse Voltage - Volts 10 20 40 100 200 400 1000 TJ =25OC www.mccsemi.com 1N914(A)(B) MCC Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 40 20 10 NanoAmp 6 4 2 1 .6 .4 .2 .1 20 40 60 TJ Instantaneous Reverse Leakage Current - NanoAmperes O versus Junction Temperature - C 80 100 120 140 MilliAmps 1200 1000 800 600 400 200 0 1 2 4 6 8 10 20 Cycles Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - Cycles 40 60 80 100 Figure 5 Peak Forward Surge Current www.mccsemi.com
1N914B 价格&库存

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1N914B
  •  国内价格
  • 1+0.18967
  • 10+0.18215
  • 100+0.16408
  • 500+0.15505

库存:0

1N914BWT
  •  国内价格
  • 1+0.39099
  • 10+0.35699
  • 30+0.35019

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1N914BWS
  •  国内价格
  • 1+0.12101
  • 10+0.11101
  • 30+0.10901
  • 100+0.10301

库存:0