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2N3906_08

2N3906_08

  • 厂商:

    MCC(美微科)

  • 封装:

  • 描述:

    2N3906_08 - PNP General Purpose Amplifier - Micro Commercial Components

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3906_08 数据手册
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3906 Features • • • Through Hole Package Capable of 600mWatts of Power Dissipation and 200mA Ic. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Marking:Type number Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant. See ordering information) • • PNP General Purpose Amplifier TO-92 A E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0Vdc) (I C=100mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=5.0Vdec, IE=0, f=100MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=100kHz) Noise Figure (IC=100µ Adc, VCE=5.0Vdc, RS=1.0kΩ f=10Hz to 15.7kHz) Delay Time (VCC=3.0Vdc, VBE=0.5Vdc Rise Time IC=10mAdc, IB1=1.0mAdc) Storage Time (VCC=3.0Vdc, IC=10mAdc Fall Time IB1=IB2=1.0mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% Min 40 40 5.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX B ON CHARACTERISTICS hFE 60 80 100 60 30 C 300 VCE(sat) 0.25 0.4 0.65 0.85 0.95 Vdc D VBE(sat) Vdc C B E SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF 250 4.5 10.0 4.0 MHz G pF DIMENSIONS pF dB DIM A B C D E G SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 35 35 225 75 ns ns ns ns INCHES MIN .170 .170 .550 .010 .130 .010 MAX .190 .190 .590 .020 .160 .104 MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 MAX 4.83 4.83 14.97 0.56 3.96 2.64 NOTE www.mccsemi.com Revision: 5 1 of 5 2008/02/01 2N3906 MCC Micro Commercial Components Base-Emitter ON Voltage vs Collector Current 1.2 1.0 0.8 VBE(ON) - (V) 120 80 40 0.6 0.4 0.2 0 0.1 TA = 100°C TA = 25°C VCE = 5.0V DC Current Gain vs Collector Current 220 VCE = 1.0V 200 160 TM hFE 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Collector-Emitter Saturation Volatge vs Collector Current 0.6 0.5 0.4 VCE(SAT) - (V) 0.3 0.2 0.1 0 1.0 VBE(SAT) - (V) IC/IB = 10 TA = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 Base-Emitter Saturation Voltage vs Collector Current IC/IB = 10 TA = 25°C 10 IC - (mA) 100 1000 0.2 1.0 10 IC - (mA) 100 1000 Collector-Base Diode Reverse Current vs Temperature 100 Common Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 1.0 COBO TA = 25°C TO-92 8 VCB = 20V 10 ICBO - (mA) 1.0 2 0.1 0 25 50 75 TJ - (°C) 100 125 150 0 0.1 pF 6 CIBO 4 1.0 Volts - (V) 10 www.mccsemi.com Revision: 5 2 of 5 2008/02/01 2N3906 Maximum Power Dissipation vs Ambient Temperature 800 12 10 600 TO-92 PD(MAX) - (mW) 400 NF - (dB) 6 4 200 SOT-23 0 0 50 100 TA - (°C) Contours of Constant Gain Bandwidth Product (fT) 24 20 16 VCE - (V) 12 8 4 0 0.1 10 0.1 hfe 100 1000 150 200 2 0 0.1 8 IC = 1.0mA MCC TM Micro Commercial Components Noise Figure vs Source Resistance VCE = 5.0V f = 1.0kHz IC = 100µ A 1.0 10 RS - (kΩ) 100 Current Gain VCE = 10V f = 1.0kHz 10 100 IC - (mA) *100MHz increments from 100 to 700, 750 and 800MHz 1.0 1.0 IC - (mA) 10 Noise Figure vs Frequency 6 VCE = 5.0V 5 1000 Switching Times vs Collector Current IB1 = IB2 = IC/10 ts 4 NF - (dB) 3 2 1 0 IC = 100µ A RS = 200Ω T - (ns) 100 tf IC = 1.0mA RS = 200Ω IC = 100µ A RS = 2.0kΩ 10 tr td 0.1 1.0 f - (kHz) 10 100 1.0 1.0 10 IC - (mA) 100 www.mccsemi.com Revision: 5 3 of 5 2008/02/01 2N3906 Input Impedance 10 VCE = 10V f = 1.0kHz 1000 Output Admittance MCC TM Micro Commercial Components VCE = 10V f = 1.0kHz hie - (kΩ) 1.0 hoe - (µΩ) 100 0.1 0.1 10 1.0 IC - (mA) 10 0.1 1.0 IC - (mA) 10 Voltage Feedback Ratio 100 1000 Turn On and Turn Off Times vs Collector Current hfe - (X10 ) 10 T - (ns) -4 100 toff ton 10 ton IB1 = IC/10 VBE(OFF) = 0.5V toff IB1 = IB2 = IC/10 10 IC - (mA) 100 1.0 0.1 1.0 IC - (mA) 10 1.0 1.0 www.mccsemi.com Revision: 5 4 of 5 2008/02/01 MCC TM Micro Commercial Components Ordering Information Device (Part Number)-AP (Part Number)-BP Packing Ammo Packing;2Kpcs/AmmoBox Bulk;1Kpcs/Bag ***IMPORTANT NOTICE*** Micro Commercial Components Corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***APPLICATIONS DISCLAIMER*** Products offer by Micro Commercial Components Corp . are not intended for use in Medical, Aerospace or Military Applications. www.mccsemi.com Revision: 5 5 of 5 2008/02/01
2N3906_08
### 物料型号 - 型号:2N3906

### 器件简介 - 类型:PNP型通用放大器 - 封装:TO-92 - 功率耗散:能够承受600mW的功率耗散和200mA的集电极电流(Ic)。 - 外壳材料:模塑塑料,UL可燃性指数94V-0。

### 引脚分配 - 2N3906晶体管为TO-92封装,具有三个引脚:集电极(C)、基极(B)和发射极(E)。

### 参数特性 - 击穿电压: - 集电极-发射极击穿电压(VBRCEO):40V - 集电极-基极击穿电压(VBRCBO):40V - 发射极-基极击穿电压(VBREBO):5.0V - 截止电流: - 基极截止电流(BL):50nA - 集电极截止电流(IcEx):50nA - 饱和电压: - 集电极-发射极饱和电压(VCE(sat)):0.25V至0.4V - 基极-发射极饱和电压(VBE(sat)):0.65V至0.95V - 小信号特性: - 电流增益-带宽积(fT):250MHz - 输出电容(Coba):4.5pF - 输入电容(Cibo):10.0pF - 噪声系数(NF):4.0dB

### 功能详解 - 2N3906是一种PNP型晶体管,常用于低功率的放大应用。由于其低噪声特性,也适用于音频放大器。

### 应用信息 - 该晶体管适用于一般用途的放大,由于其小信号特性,特别适合用于音频放大器。

### 封装信息 - 尺寸:PDF中提供了TO-92封装的具体尺寸,包括英寸和毫米两种单位。
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