2N4124

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N4123 2N4124 NPN Silicon General Purpose Transistor 625mW l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Pin Configuration Bottom View C B E TO-92 Mechanical Data l Case: TO-92, Molded Plastic A E l Marking: 2N4123 --------- 2N4123 2N4124 --------- 2N4124 B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit Collector-Emitter Voltage 2N4123 30 VCEO V 2N4124 25 Collector-Base Voltage 2N4123 40 VCBO V 2N4124 30 Emitter-Base Voltage 2N4123 VEBO 5 V 2N4124 Collector Current(DC) IC 200 mA mW 625 Pd Power Dissipation@TA=25oC 5.0 mW/oC W 1.5 Pd Power Dissipation@TC=25oC 12 mW/oC Thermal Resistance, Junction to

 200 oC/W Ambient Air Thermal Resistance, Junction to

 83.3 oC/W Case Operating & Storage Temperature Tj, TSTG -55~150 o C D G DIMENSIONS C DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com 2N4123 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol MCC Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE= 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO ICBO — IEBO — 50 50 nAdc 40 30 5.0 — — — Vdc nAdc 30 25 — — Vdc Vdc ON CHARACTERISTICS(1) DC Current Gain (IC =2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 50mAdc, IB = 5.0 mAdc) hFE 2N4123 2N4124 2N4123 2N4124 VCE(sat) — VBE(sat) — 0.95 0.3 Vdc 50 120 25 60 — — Vdc
SMALL-SIGNAL CHARACTERISTICS
    

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    Base–Emitter Saturation Voltage
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www.mccsemi.com 2N4123 2N4124 Figure 1. Capacitance Figure 2. Switching Times MCC 200 100 70 50 30 20 tf tr td ts 10 7.0 CAPACITANCE (pF) 5.0 Cibo TIME (ns) 3.0 2.0 Cobo 10.0 7.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 20 30 40 5.0 Figure 3. Frequency Variations Figure 4. Source Resistance 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A SOURCE RESISTANCE = 200 IC = 1 mA W W NF, NOISE FIGURE (dB) 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 1 mA IC = 0.5 mA SOURCE RESISTANCE = 200 IC = 0.5 mA IC = 50 A IC = 100 A m SOURCE RESISTANCE = 1 kΩ IC = 50 A m m m W 20 40 100 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kΩ) 40 100 Figure 5. Current Gain Figure 6. Qutput Admittance 300 hoe, OUTPUT ADMITTANCE ( mhos) 100 50 20 10 5 hfe , CURRENT GAIN 200 100 70 50 m 2 1 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 30 www.mccsemi.com 2N4123 2N4124 Figure 7. Input Impedance MCC Figure 8. Voltage Feedback Ratio h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 20 10 hie , INPUT IMPEDANCE (kΩ ) 5.0 2.0 1.0 0.5 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 1.0 2.0 0.5 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 9. DC Current Gain 2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C VCE = 1 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 10. Collector Saturation Region VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 www.mccsemi.com 2N4123 2N4124
MCC Figure 12. Temperature Coefficients Figure 11. "ON" Voltages TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VBE(sat) @ IC/IB = 10 θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.2 1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 55°C to +25°C +25°C to +125°C +25°C to +125°C qVC for VCE(sat) – 55°C to +25°C qVB for VBE(sat) 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) 180 200 www.mccsemi.com