2N4400

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4400 Features • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:Type number Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Rating Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Rating 40 60 6.0 600 -55 to +150 -55 to +150 Max 625 5.0 83.3 200 Unit V V V mA O C O C Unit mW mW/ OC O C/W O C/W NPN General Purpose Amplifier TO-92 A E Maximum Ratings* Symbol V CEO V CBO V EBO IC TJ TSTG Symbol PD RJ C RJA B Thermal Characteristics C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units D OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* 40 --Vdc (IC=1.0mAdc, IB =0) V(BR)CBO Collector-Base Breakdown Voltage 60 --Vdc (IC=100ì Adc, IE =0) V(BR)EBO Emitter-Base Breakdown Voltage 6.0 --Vdc (IE =100ì Adc, IC=0) ICEX Collector Cutoff Current --0.1 uAdc (VCE=35Vdc, VEB =0.4Vdc) IBL Base Cutoff Current --0.1 uAdc (VCE=35Vdc, VEB =0.4Vdc) * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. V(BR)CEO G E B C DIMENSIONS INCHES MIN .170 .170 .550 .010 .130 .096 MM MAX .190 .190 .590 .020 .160 .104 MIN 4.33 4.30 13.97 0.36 3.30 2.44 MAX 4.83 4.83 14.97 0.56 3.96 2.64 NOTE DIM A B C D E G www.mccsemi.com Revision: A 1 of 6 2011/01/01 2N4400 MCC Micro Commercial Components TM Symbol Parameter DC Current Gain (V CE=1.0Vdc, IC=1.0mAdc) (V CE=1.0Vdc, IC=10mAdc) (V CE=1.0Vdc, IC=150mAdc) (V CE=2.0Vdc, IC=500mAdc) Collector-Emitter Saturation Voltage (IC=150mAdc, IB =15mAdc) (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=150mAdc, IB =15mAdc) (IC=500mAdc, IB =50mAdc) Output Capacitance (V CB=5.0Vdc, f=140KHz) Input Capacitance (V EB=0.5Vdc, f=140KHz) Small-Signal Current Gain (IC=20mAdc, V CE=10Vdc, f=100MHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Small-Signal Current Gain (IC=1.0mAdc, V CE=10Vdc, f=1.0KHz) Delay Time Rise Time Storage Time Fall Time VCC=30Vdc, IC=150mAdc, IB1=15mAdc, V BE(off) =2.0Vdc VCC=30Vdc, IC=150mAdc, IB1=IB2=15mAdc Min Max Units ON CHARACTERISTICS hFE 40 40 50 20 ----0.75 --150 VCE(sat) 0.40 0.75 0.95 1.20 Vdc Vdc Vdc Vdc VBE(sat) SMALL-SIGNAL CHARACTERISTICS COB CIB hfe hfe hie hre hoe ----2.0 150 0.5 0.10 1.0 --------6.5 30 --200 7.5 8.0 30 15 20 225 30 pF pF ----KOHM X 10-4 umhos ns ns ns ns SWITCHING CHARACTERISTICS Td tr ts tf * Pulse Test: Pulse Width