2N5321

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5321 Features • • • • • VCEO=50V ICM=2A Ptot=1.0W (Tamb=25 OC ) Rth(jc)max=17.5OC/W, Rth(ja)max = 175OC/W Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Rating Collector-Emitter Voltage(IB=0) Collector-Base Voltage(IE=0) Emitter-Base Voltage(IC=0) Collector-Emitter Voltage(VBE=1.5v) Collector Current Operating Junction Temperature Storage Temperature Rating 50 75 5.0 75 1200 - 65 to +200 - 65 to +200 Unit V V V V mA O C O C Medium Power Silicon NPN Planar Transistor TO-39 Maximum Ratings Symbol V CEO V CBO V EBO VCEV IC TJ TSTG Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (IC=10mA, IB =0) Collector- Emitter Breakdown Voltage (IC=0.1mA, VBE=1.5V)) Emitter-Base Breakdown Voltage (IE =0.1mA, IC=0) Base-Emitter Voltage (IC =500mA, Vce=4V) Collector-Base Cut-off Current (VCB=60V, IE =0) Emitter-Base Cut-off Current (VEB =4.0V, IC=0) DC CURRENT GAIN (IC=0.5A, V CE=4V) Collector-Emitter Saturation Voltage (IC=500mA, IB =50mA) Transistion Frequency (VCE=4V, IC=0.05A, f=10MH Z) Turn-On Time ( I C =500mA Vcc=30V I B1 =50mA) Turn-Off Time ( Ic=500mA Vcc=30V Ib 1 =-Ib 2 =50mA) Min 50 75 5.0 --- -- -- Max - -- ---1.4 5.0 0.5TYP Units V V V V uA uA OFF CHARACTERISTICS V(BR)CEO* V (BR)CEV V (BR)EBO V BE(Note 2) ICBO IEBO ON CHARACTERISTICS hFE* V CE(sat)* fT TON 40 - -50 250 0.8 - -- --V MHZ ns DIM A B C D E F G H J K L 80 800 TOFF ns Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. 2.Pulsed: Pulse duration = 300us, duty cycle = 1 % DIMENSIONS INCHES MM MIN MAX MIN .335 .370 8.509 --------.334 ------------.260 .50 ----12.7 .200 5.08 .029 .045 7.366 ----.050 ----.009 .031 0.229 44° 46° 44° .028 .034 0.711 .016 .021 0.406 MAX 9.40 8.50 6.60 ----11.43 1.27 7.874 46° 0.864 0.533 NOTE - -7