2N5550-AP

MCC TM Micro Commercial Components 2N5550
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • NPN Plastic Encapsulate Transistor Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6A Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures –55OC to 150OC Capable of 625mWatts of Power Dissipation Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 • • TO-92 A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 140 --- Vdc 160 --- Vdc 6.0 --- Vdc --- 0.1 µAdc --- 50 nAdc 60 --- --- 60 --- 250 OFF CHARACTERISTICS V (BR)CEO * V (BR)CBO V (BR)EBO ICBO IEBO B Collector -Emitter Breakdown Voltage (IC=1.0mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100µAdc, IE=0) Emitter-Base Breakdown Voltage (IE=10µAdc, I C=0) Collector Cutoff Current (VCB=100Vdc, IE =0) Emitter Cutoff Current (VEB =4.0Vdc, IC=0) C ON CHARACTERISTICS hFE-1 hFE-2 hFE-3 V CE(sat) V BE(sat) DC Current Gain (V CE=5.0Vdc, IC=1.0mAdc) DC Current Gain (V CE=5.0Vdc, IC=10mAdc) DC Current Gain (V CE=5.0Vdc, IC=50mAdc) Collector-Emitter Saturation Voltage (IC=10mAdc, IB=1.0mAdc) (IC=50mAdc, IB=5.0mAdc) 20 --- --- ----- 0.15 0.25 Vdc Vdc Base-Emitter Saturation Voltage (IC=10mAdc,IB=1.0mAdc) (IC=50mAdc,IB=5.0mAdc) ----- 1.0 1.2 D E E B C C STRAIGHT LEAD BENT LEAD BULK PACK AMMO PACK G Vdc Vdc B DIMENSIONS ft Transition frequency ( VCE=10V,IC=10mA,,f=100MHz) 100 300 MHz Cob Collector output capacitance ( VCB=10V,IE=0,f=1MHz) --- 6 pF NF Noise figure ( VCE=5V,IC=0.25mA,f=1KHz) --- 6 pF *Pulse test: pulse width