2N7002V

MCC • • • • •
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002V Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Symbol VDSS VDGR VGSS ID PD RθJA TJ TSTG Rating Drain-source Voltage Drain-Gate Voltage Gate-source Voltage Drain Current Total Power Dissipation Thermal Resistance Junction to Ambient Operating Junction Temperature Storage Temperature Rating 60 60 ±20 280 150 833 -55 to +150 -55 to +150 Unit V V V mA mW ℃/W ℃ ℃ Max --2.5 ±0.1 1 500 --3.0 2.0 --50 25 5 Units Vdc Vdc µAdc µAdc DIMENSIONS N-Channel MOSFET Maximum Ratings @ 25OC Unless Otherwise Specified SOT-563 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol V(BR)DSS Vth(GS) IGSS IDSS Parameter Drain-Source Breakdown Voltage* (VGS=0Vdc, ID=10µAdc) Gate-Threshold Voltage* (VDS=VGS, ID=250µAdc) Gate-body Leakage* (VDS =0Vdc, VGS =±20Vdc) Zero Gate Voltage Drain Current* (VDS =60Vdc, VGS =0Vdc) (VDS =0Vdc, VGS =±20Vdc, Tj=125℃) On-state Drain Current* (VDS =7.5Vdc, VGS =10Vdc) Drain-Source On-Resistance* (VGS=5Vdc, ID=50mAdc) (VGS=10Vdc, ID=500mAdc) Forward Tran Conductance* (VDS=10Vdc, ID=200mAdc) Input Capacitance VDS=25Vdc, Output Capacitance VGS =0Vdc Reverse Transfer f=1MHz Capacitance Min 60 1.0 ------0.5 ----80 ------Typ 70 --------1.0 ------------- ID(ON) rDS(on) Adc Ω ms DIM A B C D G H K L M INCHES MIN .006 .043 .061 .020 .035 .059 .022 .004 .004 .043 .067 .023 .011 .007 0.90 1.50 0.56 0.10 0.10 MAX .011 .049 .067 MIN 0.15 1.10 1.55 MM MAX 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 NOTE gFS Ciss COSS CrSS pF Switching VDD=30Vdc, VGEN=10Vdc RL=150Ω,ID=200mA, td(off) Turn-off Time RG=25Ω * Pulse test, pulse width≦300μs, duty cycle≦20% td(on) Turn-on Time --------20 ns 20 Revision: 1 www.mccsemi.com 2005/01/25 2N7002V MCC Marking: KAS Revision: 1 www.mccsemi.com 2005/01/25