2SA1585S

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1585S 2SA1585S-Q 2SA1585S-R PNP Plastic-Encapsulate Transistors • • • • Features Power dissipation: PD = 0.4W(Tamb=25 ) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -20V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Electrical Characteristics @ 25 Symbol VCEO VCBO VEBO ICBO IEBO hFE VCE(sat) fT Unless Otherwise Specified Min -20 -20 -6.0 ----120 --200 Typ ----------------Max -------0.1 -0.1 390 -0.82 --Unit V V V Parameter Collector-Emitter Voltage (IC=-50­A, IE=0) Collector-Base Voltage (IC=-1­A, IB=0) Emitter-Base Voltage (IE=-50­A, IC=0) Collector cut-off Current (VCB=-20V, IE=0) Emitter cut-off Current (VEB=-5V, IC=0) DC current gain (VCE=-2V, IC=-0.1A) Collector-Emitter Saturation Voltage (IC=-2A, IB=-0.1A) Transition Frequency (VCE=2.0Vdc, IC=0.5Adc) TO-92 S A E B ­A ­A --V MHz C CLASSIFICATION OF hFE Rank Range Marking Q 120-170 1815Q R 180-390 1815R 1 2 3 D  1.EMITTER 2. COLLECTOR 3.BASE G DIMENSIONS INCHES MIN MAX .16 .12 .59 --.02 .08 .20 MM MIN 4.00 3.00 15.00 0.45 2.00 5.00 --MAX NOTE DIM A B C D E G www.mccsemi.com Revision: 2 2007/03/02