MCC
Features
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omponents 20736 Marilla Street Chatsworth !"# $
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2SC1623
High DC Current Gain: hFE=200 TYP.(V CE=6.0V, IC=1.0mA) High voltage: VCEO=50V
NPN Silicon Epitaxial Transistors
Unit V V V mA mW O C O C
F
Maximum Ratings
Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 60 5.0 100 200 -55 to +150 -55 to +150
SOT-23
A D
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector Cutoff Current (VCB=60Vdc,IE =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) DC Current Gain* (IC=1.0mAdc, VCE=6.0Vdc) Collector Saturation Voltage* (IC=100mAdc, IB =10mAdc) Base Saturation Voltage* (IC=100mAdc,IB =10mAdc) Base Emitter Voltage* (V CE=6.0Vdc, IC=1.0mAdc) Collector Capacitance (V CB=6.0Vdc, IE =0, f=1.0MHz) Gain Bandwidth product (VCE=6.0Vdc, IE =10mAdc) Min ----Typ ----Max 0.1 0.1 Units
G H J
OFF CHARACTERISTICS
ICBO IEBO uAdc
K
uAdc
DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015
DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
ON CHARACTERISTICS
hF V CE(sat) V BE(SAT) V BE Cob fT 90 ----0.55 ----200 0.15 0.86 0.62 3.0 250 600 0.3 1.0 0.65 ------Vdc Vdc Vdc pF MHz
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
Suggested Solder Pad Layout
.031 .800 .035 .900 .079 2.000 inches mm
hFE CLASSIFICATION
Marking L4 L5 hFE 90-180 135-270 * Pulse Test PW
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