BAT54S

MCC Features • • • Low Forward Voltage Surface Mount device Very small conduction losses
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BAT54 THRU BAT54S 250mWatt, 30Volt Schottky Barrier Diode Type Single Dual Dual Dual Pin Configuration (See Page 3) MCC Catalog Number BAT54 BAT54A BAT54C BAT54S Device Marking L4P L42 L43 L44 Figure 1 Figure 2 Figure 3 Figure 4 SOT-23 A D C B Maximum Ratings Continuos Reverse Voltage Forward Current Non-Repetitive Peak Forward Current t30V 10pF 5nS 500K/W Notes VF DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout VR = 25V .035 .900 .031 .800 IR V(BR) CJ trr RθJA Measured at 1.0MHz, VR=1.0V IF=IR=10mA; I(REC) = 1mA .037 .950 .037 .950 .079 2.000 inches mm www.mccsemi.com BAT54 thru BAT54S MCC Fig.2 : Average forward current versus ambient temperature ( δ = 1). 0.35 IF(av)(A) Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 IF(av) (A) 0.00 0.00 0.05 0.10 0.15 0.20 δ=tp/T tp T δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 0.30 0.25 δ=1 0.20 0.15 0.10 0.05 δ=tp/T T tp Tamb(°C) 0.25 0.30 0.00 0 25 50 75 100 125 150 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3 1.00 δ = 0.5 δ = 0.2 Ta=25°C δ = 0.1 Ta=50°C 0.10 T Single pulse Ta=100°C t δ=0.5 t(s) 1E-2 1E-1 1E+0 tp(s) δ=tp/T tp 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 www.mccsemi.com BAT54 thru BAT54S MCC Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). IR(µA) 1E+2 Tj=100°C Fig.6 : Reverse leakage current versus junction temperature. IR(µA) 1E+4 VR=30V 1E+3 1E+2 1E+1 1E+1 1E+0 1E-1 1E-2 Tj=50°C 1E+0 Tj=25°C 1E-1 VR(V) 0 5 10 15 20 25 30 Tj(°C) 1E-2 0 25 50 75 100 125 150 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 F=1MHz Tj=25°C Fig.8 : Forward voltage drop versus forward current (typical values). IFM(A) 5E-1 1E-1 Tj=100°C 5 1E-2 Tj=50°C 2 VR(V) 1 1 2 5 10 20 30 Tj=25°C 1E-3 VFM(V) 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Pin Configuration - Top View 3 1 Figure 1 2 Figure 2 Figure 3 Figure 4 BAT54 BAT54A BAT54C BAT54S www.mccsemi.com