BC817-40

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BC817-16 THRU BC817-40 NPN Small Signal Transistor 310mW SOT-23 A D l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram l Weight: 0.008 grams ( approx.) l Marking: BC817-16 6A BC817-25 BC817-40 6B F E C B 6C G H J Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Power Dissipation@T s=50 C(Note1) Operating & Storage Temperature o Symbol Value VCEO 45 VEBO IC ICM IEM Pd 5 800 1000 1000 310 Unit V V mA mA mA mW o DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Tj, TSTG -55~150 2 C MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Note: 1. Device mounted on Ceramic Substrate 0.7mm X 2.5cm area .035 .900 Suggested Solder Pad Layout .031 .800 .079 2.000 inches mm .037 .950 .037 .950 www.mccsemi.com BC817-16 thru BC817-40 Electrical Characteristics Characteristic DC Current Gain Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 @25°C unless otherwise specified Symbol Min 100 160 250 60 100 170 — — — — — — 100 — Max 250 400 600 — — — 320 400 0.7 1.2 100 5.0 100 — 12 Unit MCC Test Condition VCE = 1.0V, IC = 100mA — VCE = 1.0V, IC = 300mA hFE Thermal Resistance, Junction to Substrate Backside Thermal Resistance, Junction to Ambient Air Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Gain Bandwidth Product Collector-Base Capacitance RGSB RGJA VCE(SAT) VBE ICES IEBO fT CCBO K/W K/W V V nA µA nA MHz pF Note 1 Note 1 IC = 500mA, IB = 50mA VCE = 1.0V, IC = 300mA VCE = 45V VCE = 25V, Tj = 150°C VEB = 4.0V VCE = 5.0V, IC = 10mA, f = 50MHz VCB = 10V, f = 1.0MHz www.mccsemi.com BC817-16 thru BC817-40 MCC www.mccsemi.com