BC847C

MCC Features l l l
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BC846A THRU BC848C NPN Small Signal Transistor 310mW SOT-23 A D Ideally Suited for Automatic Insertion 150 C Junction Temperature For Switching and AF Amplifier Applications o Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram l Weight: 0.008 grams ( approx.) Type BC846A BC846B BC847A BC847B Marking Code (Note 2) Marking Type 1A BC847C 1B BC848A 1E BC848B 1F BC848C Marking 1G 1J 1K 1L C B F E G H J Maximum Ratings @ 25oC Unless Otherwise Specified DIMENSIONS BC846 BC847 BC848 Collector-Emitter Voltage BC846 BC847 BC848 Emitter-Base Voltage BC846,BC847 BC848 Collector Current Peak Collector Current Peak Emitter Current Power Dissipation@T s =50 C(Note1) Operating & Storage Temperature o C harateristic Collector-Base Voltage Symbol VC B O VC E O V EBO IC IC M IEM Pd Value 80 50 30 65 45 30 6.0 5.0 100 200 200 310 Unit V DIM A B C D E F G H J K V V mA mA mA mW o INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Tj, T S T G -55~150 C Note: 1. Package mounted on ceramic substrate 0.7mm X 2.5cm2 area. 2. Current gain subgroup “C” is not available for BC846. .037 .950 .037 .950 www.mccsemi.com BC846A thru BC848C Electrical Characteristics Characteristic Collector-Base Breakdown Voltage (Note 3) @ TA = 25°C unless otherwise specified Symbol BC846 BC847 V(BR)CBO BC848 Min 80 50 30 65 45 30 6 5 — — — — — — — — — — — — 110 200 420 — — — — 580 — — — — — — 100 — — Typ — — — — — — — 220 330 600 2.7 4.5 8.7 18 30 60 1.5x10-4 2x10-4 3x10-4 180 290 520 — — 90 200 700 900 660 — — — — — — 300 3.0 2 Max — — — — — — — — — — — — — — — — — — — 220 450 800 320 400 250 600 — 700 770 15 15 15 15 5.0 — — 10 Unit V V V — — — kW kW kW µS µS µS — — — — °C/W °C/W mV mV mV nA nA nA nA µA MHz pF dB MCC Test Condition IC = 10mA, IB = 0 IC = 10mA, IB = 0 IE = 1mA, IC = 0 Collector-Emitter Breakdown Voltage (Note 3) BC846 BC847 V(BR)CEO BC848 Emitter-Base Breakdown Voltage (Note 3) H-Parameters Small Signal Current Gain BC846 BC847 V(BR)EBO BC848 hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre — RqS RqJA VCE(SAT) VBE(SAT) VBE(ON) BC846 BC847 BC848 ICES ICES ICES ICBO ICBO fT CCBO NF Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio A Current Gain Group B C DC Current Gain Current Gain Group A B (Note 3) C VCE = 5.0V, IC = 2.0mA, f = 1.0kHz VCE = 5.0V, IC = 2.0mA Note 1 Note 1 IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCE = 80V VCE = 50V VCE = 30V VCB = 40V VCB = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA, RS = 2.0kW, f = 1.0kHz, Df = 200Hz Thermal Resistance, Junction to Substrate Backside Thermal Resistance, Junction to Ambient Air Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: 1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area. 2. Current gain subgroup “C” is not available for BC846. 3. Short duration pulse test to minimize self-heating effect. www.mccsemi.com