BC846A THRU BC849C
Features
•
•
•
Halogen free available upon request by adding suffix "-HF"
Moisture Sensitivity Level 1
Epoxy Meets UL 94 V-0 Flammability Rating
•
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
NPN
Plastic-Encapsulate
Transistors
Maximum Ratings @ 25°C Unless Otherwise Specified
•
•
•
Operating Junction Temperature Range: -55℃ to +150℃
Storage Temperature Range: -55℃ to +150℃
Maximum Thermal Resistance:625℃/W Junction to Ambient
Parameter
Collector-Base Voltage
Symbol
VCBO
BC846A-BC846B
BC847A-BC847C
BC848A-BC848C,BC849B-BC849C
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Collector Power Dissipation@TA=25℃(Note1)
Unit
V
IC
PC
V
65
45
30
V
6
100
225
mA
mW
C
Marking:
E
D
C
Internal Structure
B
A
80
50
30
Collector-Emitter Voltage
BC846A-BC846B
BC847A-BC847C
BC848A-BC848C,BC849B-BC849C
Rating
SOT-23
BC846A:1A,46A; BC846B:1B,46B;
BC847A:1E,47A; BC847B:1F,47B; BC847C:1G,47C;
BC848A:1J,48A; BC848B:1K,48B; BC848C:1L,48C;
BC849B:49B; BC849C:49C;
F
B
E
H
G
J
L
K
DIMENSIONS
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.110 0.120 2.80 3.04
B
0.083 0.104 2.10 2.64
C
0.047 0.055 1.20 1.40
0.034 0.041 0.85 1.05
D
E
0.067 0.083 1.70 2.10
F
0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H
0.035 0.043 0.90 1.10
J
0.003 0.007 0.08 0.18
K
0.014 0.020 0.35 0.51
L
0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
0.037
0.950
Rev.3-1-01012019
1/4
inches
mm
0.037
0.950
MCCSEMI.COM
BC846A THRU BC849C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Symbol
Min
Typ
Max
Units
Conditions
Collector-Base Breakdown Voltage
80
50
30
V
IC=10µA, IE=0
V(BR)CEO
65
45
30
V
IC=10mA, IB=0
V(BR)EBO
6
V
IE=10µA, IC=0
VCB=70V, IE=0
VCB=50V, IE=0
VCB=30V, IE=0
BC846A-BC846B
V(BR)CBO
BC847A-BC847C
BC848A-BC848C,BC849B-BC849C
Collector-Emitter Breakdown Voltage
BC846A-BC846B
BC847A-BC847C
BC848A-BC848C,BC849B-BC849C
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BC846A-BC846B
BC847A-BC847C
BC848A-BC848C,BC849B-BC849C
ICBO
0.1
µA
ICEO
0.1
µA
Collector Cut-off Current
BC846A-BC846B
VCE=60V,IB=0
BC847A-BC847C
VCE=45V,IB=0
BC848A-BC848C,BC849B-BC849C
VCE=30V,IB=0
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
0.1
BC846A,BC847A, BC848A
110
220
BC846B,BC847B,BC848B, BC849B
200
450
BC847C,BC848C,BC849C
420
800
µA
VEB=5V, IC=0
VCE=5V, IC=2mA
Collector-Emitter Saturation Voltage
VCE(sat)
0.5
V
IC=100mA, IB=5mA
Base-Emitter Saturation Voltage
VBE(sat)
1.10
V
IC=100mA, IB=5mA
Transition Frequency
Collector Output Capacitance
fT
100
MHz
Cob
4.5
pF
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
Note:
1. Transistor mounted on an FR4 printed-circuit board
Rev.3-1-01012019
2/4
MCCSEMI.COM
BC846A THRU BC849C
Curve Characteristics
Fig. 2 - DC Current Gain Characteristics
Fig. 1 - Static Characteristics
3000
10
Common Emitter
VCE= 5V
Common Emitter
TA=25°C
1000
TA=100°C
20μA
18μA
6
DC Current Gain
Collector Current (mA)
8
16μA
14μA
12μA
4
10μA
TA=25°C
100
8μA
6μA
2
4μA
IB=2μA
10
0
0
1
2
3
4
6
5
1
7
10
Collector-Emitter Voltage (V)
Fig. 3 - Base-Emitter Saturation Voltage Characteristics
Fig. 4 - Collector-Emitter Saturation Voltage Characteristics
500
Collector-Emitter Saturation Voltage (mV)
1000
Base-Emitter Saturation Voltage (mV)
100
Collector Current (mA)
800
TA=25°C
600
TA=100°C
400
100
TA=100°C
TA=25°C
β=20
β=20
200
0.1
1
10
10
0.1
100
1
250
Collector Power Dissipation (mW)
Collcetor Current (mA)
Common Emitter
VCE=5V
10
TA=100°C
1
TA=25°C
0.4
0.6
0.8
1.0
Base-Emitter Voltage (V)
Rev.3-1-01012019
100
Fig. 6 - Collector Power Derating Curve
Fig. 5 - Base-Emitter Voltage Characteristics
100
0.1
0.2
10
Collector Current (mA)
Collector Current (mA)
200
150
100
50
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
3/4
MCCSEMI.COM
BC846A THRU BC849C
Ordering Information
Device
Packing
Part Number-TP
Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF
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Rev.3-1-01012019
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MCCSEMI.COM