BC858B

MCC Features l l l
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BC856A THRU BC858C PNP Small Signal Transistor 310mW SOT-23 A D Ideally Suited for Automatic Insertion 150 C Junction Temperature For Switching and AF Amplifier Applications o Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram l Weight: 0.008 grams ( approx.) Type BC856A BC856B BC857A BC857B Marking Code (Note 2) Marking Type 3A BC857C 3B BC858A 3E BC858B 3F BC858C C B Marking 3G 3J 3K 3L F E G H J Maximum Ratings @ 25oC Unless Otherwise Specified C harateristic Collector-Base Voltage Symbol BC856 BC857 BC858 BC856 BC857 BC858 VC B O Value -80 -50 -30 -65 -45 -30 -5.0 -100 -200 -200 310 Unit V DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Collector-Emitter Voltage VC E O V EBO IC IC M IEM V V mA mA mA mW o Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Power Dissipation@T s =50 C(Note1) Operating & Storage Temperature o MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Pd Tj, T S T G -55~150 C Note: 1. Package mounted on ceramic substrate 0.7mm X 2.5cm2 area. 2. Current gain subgroup “C” is not available for BC856 .037 .950 .037 .950 www.mccsemi.com BC856A thru BC858C Electrical Characteristics Characteristic Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) H-Parameters Small Signal Current Gain Input Impedance Output Admittance Reverse Voltage Transfer Ratio DC Current Gain (Note 3) Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C BC856 BC857 BC858 BC856 BC857 BC858 @ TA =25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre hFE RqJSB RqJA VCE(SAT) VBE(SAT) VBE(ON) BC856 BC857 BC858 ICES ICES ICES ICBO ICBO fT CCBO NF Min -80 -50 -30 -65 -45 -30 -5 — — — — — — — — — — — — 125 220 420 — — — — — -600 — — — — — — 100 — — Typ — — — — — — — 200 330 600 2.7 4.5 8.7 18 30 60 1.5x10-4 2x10-4 3x10-4 180 290 520 — — -75 -250 -700 -850 -650 — — — — — — 200 3 2 Max — — — — — — — — — — — — — — — — — — — 250 475 800 320 400 -300 -650 — -750 -820 -15 -15 -15 -15 -4.0 — — 10 Unit V V V — — — kW kW kW µS µS µS — — — — °C/W °C/W mV mV mV nA nA nA nA µA MHz pF dB MCC Test Condition IC = 10mA, IB = 0 IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCE = -5.0V, IC = -2.0mA, f = 1.0kHz VCE = -5.0V, IC = -2.0mA Note 1 Note 1 IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCE = -80V VCE = -50V VCE = -30V VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz VCE = -5.0V, IC = 200µA, RS = 2kW, f = 1kHz, Df = 200Hz Thermal Resistance, Junction to Substrate Backside Thermal Resistance, Junction to Ambient Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: 1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area. 2. Current gain subgroup “C” is not available for BC856. 3. Short duration pulse test to minimize self-heating effect. www.mccsemi.com