BCW66H

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BCW66H NPN Small Signal Transistor 330mW SOT-23 A D l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Marking: EH l Weight: 0.008 grams ( approx.) Maximum Ratings @ 25oC Unless Otherwise Specified F E C B Charateristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Base Current(DC) Peak Base Current Power Dissipation@T s=79oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Soldering Point Operating & Storage Temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Pd RθJA RθJS Value 45 75 5 800 1000 100 200 330 285(1) 215 Unit V V V mA mA mA mA mW o DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 G H J K DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 C/W C/W o MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE o Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Tj, TSTG -55~150 C Notes: (1) Mounted on FR-4 printed-circuit board .037 .950 .037 .950 www.mccsemi.com BCW66H Electrical Characteristics Parameter DC Current Gain(1) at VCE = 10V, IC = 100µA at VCE = 1V, IC = 10mA at VCE = 1V, IC = 100mA at VCE = 2V, IC = 500mA Collector-Emitter Saturation Voltage at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 Collector-Base Breakdown Voltage at IC = 10µA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10µA, IC = 0 Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150°C Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 10V, IC = 20mA, f = 100MHz Collector-Base Capacitance at VCB = 10V, f = 1MHz Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz Note: (1) Pulse test: t ≤ 300µs, D = 2% (1) MCC Ratings at 25°C ambient temperature unless otherwise specified. Symbol Min. TYP. Max. Unit hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO IEBO 80 180 250 100 – – – – 630 – – – – – – – 45 75 5 – – – – – – – 0.3 0.7 1.25 2 – – – V V V V V V V – – – – – – 20 20 20 nA µA nA fT CCB CEB – – – 100 6 60 – – – MHZ pF pF www.mccsemi.com