BCW68H

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BCW68H PNP Small Signal Transistor 330mW SOT-23 A D l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Frequency l Epitaxial Planar Die Construction Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Marking: DH l Weight: 0.008 grams ( approx.) Maximum Ratings @ 25oC Unless Otherwise Specified F E C B Charateristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Base Current(DC) Peak Base Current Power Dissipation@T s=79oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Soldering Point Operating & Storage Temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Pd RθJA RθJS Value -45 -60 -5 -800 -1000 -100 -200 330 285(1) 215 Unit V G H J V V mA mA mA mA mW o DIM A B C D E F G H J K K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE C/W C/W o o Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Tj, TSTG -55~150 C Notes: (1) Valid provided that leads are kept at ambient temperature. .037 .950 .037 .950 www.mccsemi.com BCW68H Electrical Characteristics DC Current Gain (1) MCC (TA = 25°C unless otherwise noted) Symbol Min. TYP. Max. Unit at VCE = 1V, IC = 10mA at VCE = 2V, IC = 100mA at VCE = 2V, IC = 500mA Collector-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 Collector-Base Breakdown Voltage at IC = 10µA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10µA, at IC = 0 Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150°C Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 10V, IC = 20mA, f = 100MHZ Collector-Base Capacitance at VCB = 10V, f = 1MHz Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz Note: (1) Pulse test: t ≤ 300µs, D = 2% hFE hFE hFE VCEsat VCEsat VBEsat VBEsat V(BR)CEO V(BR)CBO V(BR)EBO 180 250 100 – – – – 45 60 5 – – – – – – – 630 0.3 1.0 1.25 2 – – – V V V V V V V ICBO ICBO IEBO fT CCB CEB – – – – – – – – – 100 6 60 20 20 20 – – – nA µA nA MHz pF pF www.mccsemi.com